Details, datasheet, quote on part number: MRF7S27130HR3
CategoryRF & Microwaves
Description32-bit Microcontrollers and Processors
RF Power Field Effect Transistors
N-Channel Enhancement -Mode Lateral MOSFETs MRF7S27130HR3
Designed for WiMAX base station applications with frequencies up to MRF7S27130HSR3
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
? Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA,
Pout = 23 Watts Avg., f = 2500 and 2700 MHz, 802.16d, 64 QAM /4,
2500-2700 MHz, 23 W AVG., 28 V
4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain ¨® 16.5 d
Drain Efficiency ¨® 20 RF POWER MOSFETs
Device Output Signal PAR ¨® 8.2 dB @ 0.01% Probability on CCD
ACPR @ 5.25 MHz Offset ¨® -49 dBc in 0.5 MHz Channel Bandwidt
? Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 105 Watts CW
Peak Tuned Output Power
CompanyMotorola Semiconductor Products
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MRF7S27130HSR3 32-bit Microcontrollers and ProcessorsRF Power Field Effect TransistorsN-Channel Enhancement -Mode Lateral MOSFETs MRF7S27130HR3Designed for WiMAX base station applications with frequencies up to MRF7S27130HSR32700
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