Details, datasheet, quote on part number: SI2301
PartSI2301
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs
DescriptionMedium Power MOSFETS
Medium Power MOSFETS
CompanyMicro Commercial Components
DatasheetDownload SI2301 datasheet
Cross ref.Similar parts: Si2301, DMP2215L, IRLML2244, IRLML2246, RTR025P02TL
Quote
Find where to buy
 
  

 

Features, Applications

Features

RDS(ON)=120m@VGS=-4.5V RDS(ON)=150m@VGS=-2.5V High dense cell design for extremely low RDS(ON) Rugged and reliable High Speed Switching SOT-23 Package Marking Code: S1 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating to +150 Unit /W

P-Channel Enhancement Mode Field Effect Transistor

25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = -0.75A VDS = -2.8A, VGS = -4.5V VDD = -1A, VGS = -4.5V, RGEN = 6 Test Condition VGS = -250A VDS = -20V, VGS = 0V VGS = 8V, VDS = 0V VGS = -8V, VDS = 0V VGS = VDS, = -250A VGS = -2.8A VGS = -2.0A VDS = -2.8A Min Typ Max Units V

Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c

Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, < 5 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.

-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics

TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A)

TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature

-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current


 

Some Part number from the same manufacture Micro Commercial Components
SM05 ESD Protection DevicesESD Protection Devices
ESD12VD5
ESD5V0J4
ESD5V0D5
ESD5V0AP
ESD5V0L4
ESD5V0D7
ESD5V0D3
ESD5V0M5
ESD5V0K5
ESDA6V1L
ESD12VD7
ESD7V0D5
ESD3V3D7
ESD12VD3
SI2303 PIN Diode BAS23WSOT-23 P-Channel MOSFET
LLZ18C 500mw Silicon Zener Diodes
H33 500 mW Zener Diode 1.7 to 37.2 Volts
H16-1
680KD20JX 11 to 1000 Volts Varistor 7.0 to 695.0 Joule
H6A1 500 mW Zener Diode 1.7 to 37.2 Volts
Same catergory

2N5680 : 120 V, PNP Selicon High Voltage Transistor.

2SK1452 : N-channel MOS Silicon Fet, Very High-speed Switching Application. Low ON-state resistance. Ultrahigh-speed switching. Converters. Micaless package facilitating mounting. s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Parameter Drain-to-Source Breakdown Voltage.

BSM200GB120DL : Igbt Power Module ( Low Loss Igbt Low Inductance Halfbridge Including Fast Free- Wheeling Diodes ).

BUZ902P : N-Channel. Breakdown Voltage = 220V, ID= 8A, PD= 125WPackage Type : TO247.

SML30EUZ12B : Screening Options Available = ;; Package = TO247AD ;; Type = C3 Enhanced Ultrafast Diode ;; Voltage (V) = 1200V ;; Current (A) = 30A ;; VF(cont) = 3.1V ;; Trr(typ) = 45ns.

TPD1030F : Function = Protect-mos ;; Main Characteristics = 40V, 0.6 Ohm ;; Package = SOP-8 ;; Main Application = Motor, Solenoid, Lamp Driver ;; Feature = Protection.

UF4003 : Glass Passivated. 1.0 Ampere Glass Passivated High Efficiency Rectifiers.

HGT1S2N120BNS9A : 12 A, 1200 V, N-CHANNEL IGBT, TO-263AB. s: Polarity: N-Channel ; Number of units in IC: 1.

IRFM064PBF : 35 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0170 ohms ; Package Type: HERMETIC SEALED PACKAGE-3 ; Number of units in IC: 1.

KTA1272O : SMALL SIGNAL TRANSISTOR.

RSO7K-M-08 : 0.5 A, 800 V, SILICON, SIGNAL DIODE, DO-219AB. s: Package: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMF, 2 PIN ; Number of Diodes: 1 ; IF: 500 mA ; RoHS Compliant: RoHS.

SP1100SA : SILICON SURGE PROTECTOR, DO-214AA. s: Thyristor Type: Thyristor Surge Suppressor, SILICON SURGE PROTECTOR ; Package Type: PLASTIC, SMB, 2 PIN ; Pin Count: 2.

185A : RESISTOR, WIRE WOUND, 0.125 W, 0.005; 0.01; 0.02; 0.05; 0.1; 0.5; 1 %, 10 ppm, 0.1 ohm - 961000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating DC Voltage: 300 volts ; Operating Temperature: -60 to 145 C (-76 to 293 F).

2SB1572-AZ : 3 A, 60 V, PNP, Si, POWER TRANSISTOR. s: Polarity: PNP. Collector to Base Voltage VCBO -80 Collector to Emitter Voltage VCEO -60 Emitter to Base Voltage VEBO -6.0 Collector Current (DC) IC(DC) -3.0 Note1 Collector Current (pulse) IC(pulse) -5.0 Base Current (DC) IB(DC) -0.2 Note1 Base Current (pulse) IB(pulse) -0.4 Note2 Total Power Dissipation PT 2.0 Junction Temperature Tj 150 Storage Temperature Range.

 
0-C     D-L     M-R     S-Z