Details, datasheet, quote on part number: SI2301
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs
DescriptionMedium Power MOSFETS
Medium Power MOSFETS
CompanyMicro Commercial Components
DatasheetDownload SI2301 datasheet
Cross ref.Similar parts: Si2301, DMP2215L, IRLML2244, IRLML2246, RTR025P02TL
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Features, Applications


RDS(ON)=120m@VGS=-4.5V RDS(ON)=150m@VGS=-2.5V High dense cell design for extremely low RDS(ON) Rugged and reliable High Speed Switching SOT-23 Package Marking Code: S1 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating to +150 Unit /W

P-Channel Enhancement Mode Field Effect Transistor

25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = -0.75A VDS = -2.8A, VGS = -4.5V VDD = -1A, VGS = -4.5V, RGEN = 6 Test Condition VGS = -250A VDS = -20V, VGS = 0V VGS = 8V, VDS = 0V VGS = -8V, VDS = 0V VGS = VDS, = -250A VGS = -2.8A VGS = -2.0A VDS = -2.8A Min Typ Max Units V

Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c

Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, < 5 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.

-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics

TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A)

TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature

-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current


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