The TLV702xx series of low-dropout (LDO) linear regulators are low quiescent current devices with excellent line and load transient performance. These LDOs are designed for power-sensitive applications. A precision bandgap and error amplifier provides overall 2% accuracy. Low output noise, very high power-supply rejection ratio (PSRR), and low-dropout voltage make this series of devices ideal for a wide selection of battery-operated handheld equipment. All device versions have thermal shutdown and current limit for safety. Furthermore, these devices are stable with an effective output capacitance of only 0.1 F. This feature enables the use of cost-effective capacitors that have higher bias voltages and temperature derating. The devices regulate to specified accuracy with no output load. The TLV702xxP series also provides an active pulldown circuit to quickly discharge the outputs. The TLV702xx series of LDO linear regulators are available in SOT23-5 and 1,5mm SON-6 packages.

· Very Low Dropout: mV at IOUT = 50 mA, VOUT mV at IOUT = 100 mA, VOUT 220mV at IOUT = 300 mA, VOUT V· 2% Accuracy· Low IQ: 35 A· Fixed-Output Voltage Combinations Possible from 4.8 V· High PSRR: at 1 kHz· Stable with Effective Capacitance 0.1 F(1)· Thermal Shutdown and Overcurrent Protection· Packages: SOT23-5 and 1,5mm SON-6

· Wireless Handsets Smart Phones, PDAs MP3 Players ZigBee® Networks Bluetooth® Devices Li-Ion Operated Handheld Products WLAN and Other PC Add-on Cards

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Bluetooth is a registered trademark of Bluetooth SIG. ZigBee is a registered trademark of the ZigBee Alliance. All other trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

XX(X) is the nominal output voltage. For output voltages with a resolution of 100 mV, two digits are used in the ordering number; otherwise, three digits are used (for example, = 4.75 V). P is optional; devices with P have an LDO regulator with an active output discharge. YYY is the package designator. Z is package quantity. Use "R" for reel (3000 pieces), and "T" for tape (250 pieces).

For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the device product folder at www.ti.com. Output voltages from in 50-mV increments are available. Contact factory for details and availability.

EN OUT Operating virtual junction, TJ Storage, Tstg Human Body Model (HBM) QSS 009-105 (JESD22-A114A) Charge Device Model (CDM) QSS 009-147 (JESD22-C101B.01)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability. All voltages are with respect to network ground terminal. ESD testing is performed according to the respective JESD22 JEDEC standard.

At VIN = VOUT(TYP) 2.0 V (whichever is greater); IOUT = 10 mA, VEN 0.9 V, COUT 1.0 F, and to +125°C, unless otherwise noted. Typical values are = +25°C. SPACE

PARAMETER VIN VOUT VO/VIN VO/IOUT Input voltage range DC output accuracy Line regulation Load regulation TJ +125°C VOUT(NOM) 0.5 V VIN 5.5 V, IOUT 0 mA IOUT 300 mA VIN 0.98 × VOUT(NOM), IOUT = 50 mA, VOUT 2.8 V VDO Dropout voltage (1) VIN 0.98 × VOUT(NOM), IOUT = 100 mA, VOUT 2.8 V VIN 0.98 × VOUT(NOM), IOUT = 300 mA, VOUT 2.35 V ICL IGND Output current limit Ground pin current VOUT 0.9 × VOUT(NOM) IOUT 0 mA IOUT = 300 mA, VIN = VOUT 0.5 V VEN 0.4 V, VIN 2.0 V ISHDN Ground pin current (shutdown) VEN 2.0 V VIN to +85°C VIN 2.3 V, VOUT 1.8 V, IOUT = 10 mA, = 1 kHz to 100 kHz, VIN 2.3 V, VOUT 1.8 V, IOUT 10 mA COUT 1.0 F, IOUT 0.9 0 VIN = VEN 5.5 V VIN rising VEN 0 V Shutdown, temperature increasing Reset, temperature decreasing TEST CONDITIONS MIN VIN TYP MAX UNIT A dB VRMS °C

Enable pin high (enabled) Enable pin low (disabled) Enable pin current Undervoltage lockout Active pulldown resistance (TLV702xxP only) Thermal shutdown temperature Operating junction temperature

VDO is measured for devices with VOUT(NOM) 2.35 V. Startup time = time from EN assertion 0.98 × VOUT(NOM).