Details, datasheet, quote on part number: DMNH4015SSDQ-13

Featuring low figure-of-merit on-resistance and gate charge specifications, Diodes' DMNH4015SSDQ and DMTH6016LSDQ dual, co-packaged enhancement mode MOSFETs minimize power losses, enabling cost-effective, high efficiency automotive compliant power management solutions.

CompanyDiodes, Inc.
DatasheetDownload DMNH4015SSDQ-13 datasheet
DMNH4015SSDQ-13 photo

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Features, Applications

8.6A 7.5A Rated +175C Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimizes Power Losses Low Qg Minimizes Switching Losses Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control DC-DC Converters

Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate)

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated's definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to 5. For packaging details, go to our website at

= Manufacturer's Marking NH4015SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: WW = Week - 53)

DMNH4015SSDQ Maximum Ratings (@TA = +25C, unless otherwise specified.)

Characteristic Drain-Source Voltage Gate-Source Voltage Symbol VDSS VGSS Steady State t<10s Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (380s pulse, duty cycle = 1%) Avalanche Current (Note = 0.1mH Avalanche Energy (Note ID IS IDM IAS EAS Value Units mJ

Thermal Characteristics (@TA = +25C, unless otherwise specified.)

Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range = +70C Steady state = +70C Steady state t<10s Symbol PD RJA PD RJA RJC TJ, TSTG Value to +175 Units W C/W W

Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance

(@TA = +25C, unless otherwise specified.) Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) VSD Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr Min 40 1 Typ Max = 12A, dI/dt 500A/s nS VDD = 15V, VGS 3, nC VDS = 12A Unit m V Test Condition VGS = 250A VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, = 250A VGS = 12A VGS = 10A VGS = 1A

Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. IAS and EAS rating are based on low frequency and duty cycles to keep +25C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing.

V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics
ID , DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage
ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 30


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Featuring low figure-of-merit on-resistance and gate charge specifications, Diodes' DMNH4015SSDQ and DMTH6016LSDQ dual, co-packaged enhancement mode MOSFETs minimize power losses, enabling cost-effective,

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