Details, datasheet, quote on part number: C3M0075120K
PartC3M0075120K
CategorySemiconductors => Discrete Semiconductors => Transistors => MOSFET => 8827076
TitleMOSFET SIC MOSFET 1200V 75 mOhm
Description

Wolfspeed C3M0075120K Silicon Carbide Power MOSFET reduces switching losses and minimizes gate ringing. The C3M0075120K has a high system efficiency, reduced cooling requirements, increase power density and system switching frequency. Typical applications include renewable energy, EV battery chargers, high voltage DC/DC converters, and switch mode power supplies.

CompanyWolfspeed
DatasheetDownload C3M0075120K datasheet
Specifications 
Product CategoryMOSFET
ManufacturerCree, Inc.
TechnologySiC
Mounting StyleThrough Hole
Package/CaseTO-247-4
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance75 mOhms
Vgs - Gate-Source Voltage- 4 V, + 15 V
Vgs th - Gate-Source Threshold Voltage1.7 V
Qg - Gate Charge51 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Channel ModeEnhancement
BrandWolfspeed / Cree
Configuration1 N-Channel
Fall Time11 ns
Forward Transconductance - Min8.3 S
Pd - Power Dissipation119 W
Rise Time11 ns
Factory Pack Quantity30
Transistor Type1 N-Channel
Typical Turn-Off Delay Time33 ns
Typical Turn-On Delay Time22 ns
C3M0075120K photo

 

Features, Applications

Silicon Carbide Power MOSFET TM C3M MOSFET Technology
Features

C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant

Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency

Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2)
Applications
Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies

Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static) Continuous Drain Current Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Solder Temperature

Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate 0/+15 V

V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss Eoss EON EOFF td(on) tr td(off) tf RG(int) Qgs Qgd Qg

Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Coss Stored Energy Turn-On Switching Energy (Body Diode FWD) Turn Off Switching Energy (Body Diode FWD) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Gate Resistance Gate to Source Charge Gate to Drain Charge Total Gate Charge

VGS 100 A VDS = VGS, 5 mA VDS = VGS, = 5 mA, = 150C VDS 1200 V, VGS 0 V VGS 15 V, VDS 0 V VGS 20 A VGS = 150C VDS= 20 V, IDS= 20 A VDS= 20 V, IDS= = 150C VGS 0 V, VDS = 1000 MHz VAC 25 mV

VDD 800 V, VGS 20 A, RG(ext) 0 , Timing relative to VDS Inductive load = 1 MHz, VAC 25 mV VDS 800 V, VGS 20 A Per pg 21

Reverse Diode Characteristics (TC = 25C unless otherwise specified)

Diode Forward Voltage Continuous Diode Forward Current Diode pulse Current Reverse Recover time Reverse Recovery Charge Peak Reverse Recovery Current

VGS -4 V, ISD 10 A VGS -4 V, ISD 150 C VGS -4 V VGS -4 V, pulse width tP limited by Tjmax VGS -4 V, ISD 800 V dif/dt = 3600 A/s, 150 C

Thermal Resistance from Junction to Case Thermal Resistance From Junction to Ambient

Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 C3M0075120K Rev. 02-2017
Figure 6. On-Resistance vs. Temperature For Various Gate Voltage

 

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