Details, datasheet, quote on part number: IXFH220N06T3
PartIXFH220N06T3
CategorySemiconductors => Discrete Semiconductors => Transistors => 8827336
TitleMOSFET 60V/220A TrenchT3
Description

IXYS 60V TrenchT3 HiPerFET Power MOSFETs are ultra low on-resistance, rugged devices designed for industrial power conversion applications. TrenchT3 HiPerFET MOSFETs offer on-resistance as low as 3.1m, can withstand a junction temperature up to 175C, and are avalanche rated at high avalanche current levels.

CompanyIXYS Corporation
DatasheetDownload IXFH220N06T3 datasheet
Specifications 
TechnologySiC
Mounting StyleThrough Hole
Package/CaseTO-247-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current220 A
Rds On - Drain-Source Resistance4 mOhms
Vgs - Gate-Source Voltage+/- 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge136 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Channel ModeEnhancement
TradenameHiPerFET
IXFH220N06T3 photo

Others parts numbering
IXFA220N06T3
IXFA270N06T3: MOSFET 60V/270A TrenchT3
IXFH270N06T3
IXFP270N06T3
IXFP220N06T3

 

Features, Applications

N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL

Test Conditions to 175C, RGS = 1M Transient = 25C Lead Current Limit, RMS = 25C, Pulse Width Limited by TJM = 25C

Maximum Lead Temperature for Soldering mm (0.062in.) from Case for 10s Mounting Force (TO-263) Mounting Torque TO-220 TO-247

Features

International Standard Packages 175C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on)

Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 250A VDS = VGS, = 250A VGS = 20V, VDS = 0V VDS = VDSS, VGS = 150C VGS = 100A, Notes 1, 2

Easy to Mount Space Savings High Power Density
Applications
DC-DC Converters & Off-Line UPS Primary-Side Switch High Current Switching Applications

Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.50 0.21 VGS = 10V, VDS = 0.5 VDSS, 0.5 ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, = 5 (External) VGS = 0V, VDS = 1MHz VDS = 60A, Note 1 Characteristic Values Min. Typ. Max. nC 0.34 C/W

Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr IRM QRM VGS = 0V Repetitive, Pulse Width Limited by TJM = 100A, VGS = 0V, Note = 110A, VGS = 0V -di/dt 1.9 37 Characteristic Values Min. Typ. Max. A nC

2. On through-hole packages, RDS(on) Kelvin test contact location must 5mm or less from the package body.

The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 4. Normalized RDS(on) = 110A Value vs. Junction Temperature

 

Some Part number from the same manufacture IXYS Corporation
IXFA220N06T3

IXYS 60V TrenchT3 HiPerFET Power MOSFETs are ultra low on-resistance, rugged devices designed for industrial power conversion applications. TrenchT3 HiPerFET MOSFETs offer on-resistance as low as 3.1m,

IXFA270N06T3
IXFH270N06T3
IXFP270N06T3
IXFP220N06T3
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