Details, datasheet, quote on part number: EPC2045
PartEPC2045
Category
TitleEnhancement-Mode Power Transistor Preliminary Specification Sheet
DescriptionVDS, 100 V
• Maximum RDS(on), 7 mΩ
• ID, 16 A
Applications:
• Open Rack Server Architectures
• LiDAR/Pulsed Power Applications
• USB-C
• Isolated Power Supplies
• Point of Load Converters
• Class D Audio
• LED Lighting
• Low Inductance Motor Drive
CompanyEfficient Power Conversion
DatasheetDownload EPC2045 datasheet
  

 

Features, Applications
EPC2045 ­ Enhancement-Mode Power Transistor Preliminary Specification Sheet

Status: Engineering Features: VDS, 100 V Maximum RDS(on), 7 m ID, 16 A Applications: Open Rack Server Architectures LiDAR/Pulsed Power Applications USB-C Isolated Power Supplies Point of Load Converters Class D Audio LED Lighting Low Inductance Motor Drive

Maximum Ratings VDS ID VGS TJ TSTG Drain-to-Source Voltage (Continuous) Drain-to-Source Voltage (up 10,000 5ms pulses at 150°C) Continuous (TA = 25°C, RJA= 38 °C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage Gate-to-Source Voltage Operating Temperature Storage Temperature 150 V

EPC2045 eGaN® FETs are supplied in passivated die form with solder bumps. Die Size: 1.5 mm

Static Characteristics (TJ= 25°C unless otherwise stated) PARAMETER BVDSS IDSS IGSS VGS(TH) RDS(on) VSD Drain-to-Source Voltage Drain Source Leakage Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Threshold Voltage Drain-Source On Resistance Source-Drain Forward Voltage TEST CONDITIONS VGS 0.3 mA VDS 80 V, VGS 0 V VGS 5 V VGS -4 V VDS = VGS, 5 mA VGS 0.5 A, VGS 0 V Thermal Characteristics TYP RJC RJB RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Board Thermal Resistance, Junction to Ambient (Note UNIT °C/W 0.8 MIN TYP MAX UNIT m V

All measurements were done with substrate shorted to source.

Note 1: RJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

Dynamic Characteristics (TJ= 25°C unless otherwise stated) PARAMETER CISS CRSS COSS COSS(ER) COSS(TR) RG QG QGS QGD QG(TH) QOSS QRR Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Energy Related (note 2) Effective Output Capacitance, Time Related (note 3) Gate Resistance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Charge at Threshold Output Charge Source-Drain Recovery Charge VDS 50 V, VGS 0 V VDS 16 A VDS 50 V, VGS ID=16 A VDS 50 V, VGS 0 V TEST CONDITIONS MIN TYP 390 pF MAX 685 UNIT

Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from to 50% BVDSS. Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from to 50% BVDS. All measurements were done with substrate shorted to source.


Figure 5c: Output Charge and COSS Stored Energy

 

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