Details, datasheet, quote on part number: MR4A16BCMA35
PartMR4A16BCMA35
Category
TitleNVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
Description

Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, organized as 131,072 words of 8 bits or 65,536 words of 16 bits, and as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance.



CompanyEverspin Technologies Inc
DatasheetDownload MR4A16BCMA35 datasheet
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Features, Applications
FEATURES

+3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Unlimited read & write endurance Data always non-volatile for >20-years at temperature RoHS-compliant small footprint BGA and TSOP2 package AEC-Q100 Grade 1 option in TSOP2 package. x 16 MRAM

One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs Improves reliability by replacing battery-backed SRAM

The a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 1,048,576 words of 16 bits. The MR4A16B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. To simplify fault tolerant design, MR4A16B includes internal single bit error correction code with 7 ECC parity bits for every 64 data bits. The MR4A16B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A16B is available in small footprint 48-pin ball grid array (BGA) package and a 54-pin thin small outline package (TSOPII). These packages are compatible with similar low-power SRAM products and other nonvolatile RAM products. The MR4A16B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature to +70 C), industrial temperature to +85 C), and AEC-Q100 Grade to +125 C) temperature range options.

1. DEVICE PIN ASSIGNMENT.........................................................................3 2. ELECTRICAL SPECIFICATIONS.................................................................4 3. TIMING SPECIFICATIONS.......................................................................... 7 4. ORDERING INFORMATION.......................................................................12 5. MECHANICAL DRAWING..........................................................................13 6. REVISION HISTORY......................................................................................15 How to Reach Us..........................................................................................15 1 Document Number: MR4A16B Rev. 7, 10/2011

G OUTPUT ENABLE BUFFER 10 ROW DECODER COLUMN DECODER SENSE AMPS 8 UPPER BYTE OUTPUT ENABLE LOWER BYTE OUTPUT ENABLE

LOWER BYTE OUTPUT BUFFER UPPER BYTE WRITE DRIVER
UPPER BYTE WRITE ENABLE LOWER BYTE WRITE ENABLE

Signal Name LB DQ VDD VSS DC NC Function Address Input Chip Enable Write Enable Output Enable Upper Byte Enable Lower Byte Enable Data I/O Power Supply Ground Do Not Connect No Connection

Figure 1.2 Pin Diagrams for Available Packages (Top View)

Not selected Output disabled Output disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write


 

Some Part number from the same manufacture Everspin Technologies Inc
MR4A08BCYS35

Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such

MR2A16ACMA35
MR4A16BCYS35R
MR2A08AYS35
MR25H256CDC
MR25H256CDF
MR2A16ACYS35
MR4A16BCYS35
MR4A16BMA35
MR0A08BCYS35
MR0A08BYS35
MR25H10MDF
MR2A08ACYS35
MR4A16BYS35
MR25H256MDF
MR0A16ACMA35
MR25H256ACDF
MR25H256AMDF
MR25H128APDF
MR25H256APDF
MR25H128AMDF
 
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