Details, datasheet, quote on part number: SIRA20DP-T1-RE3
PartSIRA20DP-T1-RE3
Category
TitleMOSFET N-CHAN 25V POWERPAK SO-8
Description

Vishay Siliconix's SiRA20DP N-channel 25 V MOSFET has the lowest RDS(ON) in its class. It reduces switching-related power loss by optimizing total gate charge (Qg), gate-drain charge (Qgd), and Qgd/gate-source charge (Qgs) ratio. The very low Qgd "miller" charge enables passing through plateau voltage faster.  It is packaged in a conventional PowerPAK® SO-8 design.  Presenting higher power density without changing the package dimension and pin configuration. The 10-mil clip reduces package contributed resistance by 66% and maximizes the performance of the silicon.



CompanyVISHAY SILICONIX
DatasheetDownload SIRA20DP-T1-RE3 datasheet
  
SIRA20DP-T1-RE3 photo

 

Features, Applications

FEATURES

TrenchFET® Gen IV power MOSFET Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss % Rg and UIS tested

APPLICATIONS
Synchronous rectification High power density DC/DC Synchronous buck converter

VDS (V) RDS(on) max. at VGS 10 V RDS(on) max. at VGS V Qg typ. (nC) ID (A) Configuration a, g Single

Package Lead (Pb)-free and halogen-free PowerPAK SO-8 Single SiRA20DP-T1-RE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER Drain-source voltage Gate-source voltage 0.1 mH SYMBOL VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT +150 260 UNIT V

Continuous drain current (TJ = 150 °C) Pulsed drain current 100 s) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy

70 °C Maximum power dissipation 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient 10 s RthJA 15 20 °C/W 0.9 1.2 Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited. b. Surface mounted 1" FR4 board. s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 °C/W. = 25 °C. A, 10-Oct-16 Document Number: 76212 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PARAMETER Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a Dynamic b Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Reverse recovery fall time Reverse recovery rise time nC ns

Notes a. Pulse test; pulse width 300 s, duty cycle 2 b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Document Number: 76212 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title 10000 2nd line RDS(on) - On-Resistance (Normalized) 1.6

Document Number: 76212 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


 

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