Details, datasheet, quote on part number: HMC-C056
PartHMC-C056
Category
TitleX2 ACTIVE FREQ MULT MODULE 8-21
Description
CompanyAnalog Devices
DatasheetDownload HMC-C056 datasheet
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HMC-C056 photo

 

Features, Applications
FEATURES
8 GHz to 21 GHz, GaAs, pHEMT, x2 Active Frequency Multiplier Module HMC-C056

High output power: 14 dBm typical Input power drive: 0 dBm to 10 dBm Single sideband (SSB) phase noise at 100 kHz offset: -142 dBc/Hz Output frequency (fOUT) isolation 16 dBc at fOUT = 15 GHz Hermetically sealed module (HSM) SMA field replaceable connectors to +85°C operating temperature

APPLICATIONS

Clock generation applications Synchronous optical networking (SONET) optical carrier (OC)-192 and synchronous digital hierarchy (SDH) synchronous transport module (STM)-64 Point to point and very small aperture terminal (VSAT) radios Test instrumentation Military electronic warfare and radar Space

The a ×2 active broadband frequency multiplier module, using gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) technology in a miniature HSM. When driven a 6 dBm signal, the multiplier provides 14 dBm typical output power from 8 GHz to 21 GHz. The fOUT isolation is 16 dBc at 15 GHz with respect to the output signal level. The is a frequency multiplier, featuring dc blocked inputs/outputs. The HMC-C056 is ideal for use in local oscillator (LO) multiplier chains for point to point and VSAT radios yielding reduced devices count vs. traditional approaches. The low additive SSB phase noise of -142 dBc/Hz at 100 kHz offset has minimal impact on system level noise performance.

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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

Features.............................................................................................. 1 Applications....................................................................................... 1 Functional Block Diagram.......................................................... 1 General Description......................................................................... 1 Revision History............................................................................... 2 Specifications..................................................................................... 3 Electrical Specifications............................................................... 3 Absolute Maximum Ratings............................................................ 4

ESD Caution...................................................................................4 Pin Configuration and Function Descriptions..............................5 Interface Schematics.....................................................................5 Typical Performance Characteristics..............................................6 Outline Dimensions..........................................................................8 Ordering Guide.............................................................................8

This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. 04.1110 to Rev. D Updated Format.................................................................. Universal Changes to Features Section............................................................ 1 Changes to Table 1............................................................................ 3 Changes to Table 3............................................................................ 5 Updated Outline Dimensions......................................................... 7 Changes to Ordering Guide............................................................ 7

= 25°C, +VDC 12 V, -VDC -5 V, radio frequency (RF) input power = 6 dBm, unless otherwise noted. Table 1.

Parameter FREQUENCY RANGE Input Output OUTPUT POWER, fOUT = 10 GHz to 20 GHz fOUT ISOLATION (WITH RESPECT TO OUTPUT LEVEL) INPUT POWER DRIVE RETURN LOSS Input Output SSB PHASE NOISE (100 kHz OFFSET), fOUT = 15 GHz SUPPLY CURRENT +VDC -VDC Min Typ Max


 

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