|Title||TVS DIODE 5VC 5A IPP UDFN2510-10|
Diodes Incorporated introduces two TVS devices with ultra-low channel input capacitance (CI/O): D3V3X4U10LP and D3V3F4U10LP. These devices are designed to provide data line protection for the sensitive mixed signal SoCs (system-on-chip) which are manufactured on the low-power advanced process nodes and are compatible to the high-speed interface standards like USB, HDMI®, DisplayPort™. With reverse breakdown voltage (VBR) at 6.2 V (typical), peak pulse current (IPP) per IEC61000-4-5 as much as 5 A, and ability to withstand ESD strike (VESD) per IEC61000-42 up to ±12 kV for air and contact discharge, these devices meet or exceed all requirements for protecting the high-speed interface like USB Type-C™ from possible ESD hazards. The ultra-low channel input capacitance (CI/O) at 0.45 pF to 0.5 pF (typical) enables good signal integrity for reliable data transfers over high-speed interfaces. Housed in the low-profile and fully green DFN2501-10 package, these devices are well-suited to the fully automated manufacturing environment. With Z height at less than 0.58 mm (typical), they can be easily applied in systems where space is at a premium such as computers and peripherals, smartphones, 4K/8K monitors, audio/visual equipment, and AR/VR equipment.
|Datasheet||Download D3V3F4U10LP-7 datasheet
|Others parts numbering|
|D3V3X4U10LP-7: TVS DIODE 3VC 3A IPP UDFN2510-10|
Clamping Voltage: IEC6100-4-2 IEC61000-4-2 (ESD): Air ±12kV, Contact ±12kV IEC61000-4-5 (Lightning): (8/20µs) 4 Channels of ESD Protection Ultra-Low Channel Input Capacitance of 0.5pF Typical TLP Dynamic Resistance: 0.25 Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and Antimony Free. "Green" Device (Note 3)Description
The is a high-performance device suitable for protecting four high speed I/Os. These devices are assembled in UDFN2510-10 packages and have high ESD surge capability, low ESD clamping voltage and Ultra-low capacitance.Applications
Typically used at high-speed ports such as USB 3.0, USB 3.1, Serial ATA, Display port.
Case: U-DFN2510-10 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiPdAu over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e4 Weight: 0.038 grams (Approximate)
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
QD6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: M = Month (ex: 9 = September) 2017 E Apr 4 May 5 Jun 6 Jul 2018 F Aug 8 Sep 2019 G Oct O Nov 2020 H Dec D March 2017Date Code Key Year Code Month Code Jan 1
D3V3F4U10LP Maximum Ratings (@TA +25° C, unless otherwise specified.)
Characteristic Peak Pulse Current, per IEC61000-4-5 Peak Pulse Power, per IEC61000-4-5 ESD Protection Contact Discharge, per IEC61000-4-2 ESD Protection Air Discharge, per IEC61000-4-2 Symbol IPP PPP VESD_CONTACT VESD_AIR Value Unit W kV Condition I/O to VSS, 8/20µs I/O to VSS, 8/20µs I/O to VSS I/O to VSS
Characteristic Power Dissipation Typical (Note 5) Thermal Resistance, Junction to Ambient Typical (Note 5) Operating and Storage Temperature Range Symbol PD RJA TJ,TSTG Value to +150 Unit mW ° C/W ° C
Characteristic Reverse Working Voltage Reverse Current Reverse Breakdown Voltage Forward Clamping Voltage Holding Reverse Voltage Reverse Clamping Voltage (Note 6) Clamping Voltage (Note 7) Clamping Voltage (Note 7) Dynamic Reverse Resistance Dynamic Forward Resistance Channel Input Capacitance
(@TA +25° C, unless otherwise specified.) Symbol VRWM IR VBR VF VHOLD VC RDIF-R RDIF-F CI/O Min 5.5 -1.0 Typ Max 3.3 1.0 Unit pF Test Condition = 3.3V, I/O to VSS = 1mA, I/O to VSS = -15mA, I/O to VSS I/O to VSS IPP = 5A, I/O to VSS, 8/20µs TLP, = 100ns, I/O to VSS TLP, = 100ns, I/O to VSS TLP, = 100ns, I/O to VSS TLP, = 100ns, VSS to I/O VI/O = 0V, VSS = 1MHz
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporated's suggested pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 6. Clamping voltage value is based an 8x20µs peak pulse current (IPP) waveform. 7. Clamping voltage value is based on a TLP model. TLP conditions: = 1ns, averageing window; to t2=90ns.PEAK PULSE DERATING % OF PEAK POWER OR CURRENT
TA, AMBIENT TEMPERATURE (°C) Figure 1. Pulse Derating Curve
VI/O, INPUT VOLTAGE (V) Figure 2. Input Capacitance vs. Input Voltage
|Some Part number from the same manufacture Diodes, Inc.|
Diodes Incorporated introduces two TVS devices with ultra-low channel input capacitance (CI/O): D3V3X4U10LP and D3V3F4U10LP. These devices are designed to provide data line protection for the sensitive