Details, datasheet, quote on part number: SCP8UT78HPL1ULS06E
PartSCP8UT78HPL1ULS06E
Category
TitleLED LM101A WARM WHT 3500K 2SMD
Description
CompanySamsung Electronics Co., Ltd.
DatasheetDownload SCP8UT78HPL1ULS06E datasheet
  

Others parts numbering
SCP8TT78HPL1TLS06E: LED LM101A NEUT WHT 4000K 2SMD
SCP9UT78HPL1ULS06E
SCP9VT78HPL1VLS06E: LED LM101A WARM WHT 3000K 2SMD
SCP9WT78HPL1WLS06E: LED LM101A WARM WHT 2700K 2SMD
SCP8WT78HPL1WLS06E
SCP8PT78HPL1PLS06E: LED LM101A COOL WHT 6500K 2SMD
SCP8QT78HPL1QLS06E: LED LM101A COOL WHT 5700K 2SMD
SCP8RT78HPL1RLS06E: LED LM101A COOL WHT 5000K 2SMD
SCP8VT78HPL1VLS06E: LED LM101A WARM WHT 3000K 2SMD

 

Features, Applications

About Samsung Electronics Co., Ltd. Samsung Electronics Co., Ltd. inspires the world and shapes the future with transformative ideas and technologies, redefining the worlds of TVs, smartphones, wearable devices, tablets, cameras, digital appliances, printers, medical equipment, network systems and semiconductors. We are also leading in the Internet of Things space through, among others, our Digital Health and Smart Home initiatives. We employ 307,000 people across 84 countries. To discover more, please visit our official website at www.samsung.com and our official blog at global.samsungtomorrow.com.

Samsung Electronics Co., Ltd. 95, Samsung 2-ro Giheung-gu Yongin-si, Gyeonggi-do, 446-711 KOREA
Samsung Chip scale package (CSP) LEDs
Significantly scale down the size that allows for more flexible and compact designs
Added value provided with the advanced chip scale packaging technology
1 W class mid power LED (6000hrs) : Nov. 2015 Compact footprint: 1.18
Flip-chip CSP Epi-up lead frame package Rth(K/W)
Flip-chip CSP Epi-up lead frame package Current
Bin option is available, please refer to data sheet for more details.
Low FIT & No sulfurization Simple structure: no wire, no silver reflector
Easy to design optics Suitable design for omni directional bulb applications
Bin option is available, please refer to data sheet for more details. [Under development]
1W class mid power LED with white side wall Film on Chip structure Compact footprint: x 1.42

Customizable array arrangement Greater freedom of design One time certification Faster time-to-market cycle Low inventory burden

Samsung flip chip provides optimized solution for torch / flash light

2 W class high power LED Film on Chip structure Plastic-free structure delivers low thermal resistance Compact footprint: x 1.46

Applications

 

Some Part number from the same manufacture Samsung Electronics Co., Ltd.
SCP8TT78HPL1TLS06E
SCP9UT78HPL1ULS06E
SCP9VT78HPL1VLS06E
SCP9WT78HPL1WLS06E
SCP8WT78HPL1WLS06E
SCP8PT78HPL1PLS06E
SCP8QT78HPL1QLS06E
SCP8RT78HPL1RLS06E
SCP8VT78HPL1VLS06E

K4R271669B : Description = K4R271669B Direct RDRAM™ ;; Organization = 256Kx16*32s ;; Voltage(V) = 2.5 ;; Refresh = 16K/32m ;; Speed(MHz)/ TRAC(ns) = 400/45 ;; Package = 54uBGA ;; Production Status = Eol ;; Comments = For Short Channel

K4S161622D-TI/E55 : Description = K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ;; Organization = 1Mx16 ;; Bank/ Interface = 2B/LVTTL ;; Refresh = 2K/32ms ;; Speed = 55,60,70,80,10 ;; Package = 50TSOP2 ;; Power = C,l ;; Production Status = Mass Production ;; Comments = -

K7B161825A-QI75 : SB & SPB Description = K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ;; Organization = 1Mx18 ;; Operating Mode = SB ;; VDD(V) = 3.3 ;; Access Time-tCD(ns) = 6.5,7.5,8.5 ;; Speed-tcyc (MHz) = 133,118,100 ;; I/o Voltage(V) = 3.3,2.5 ;; Package = 100TQFP,165FBGA ;; Production Status = Mass Pro

KM736FS4011AH-4 : Ultra Speed Sync SRAM->Late Write(R-R, R-L) Description = KM736FS4011AH 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ;; Organization = 128Kx36 ;; VDD(V) = 2.5 ;; Access Time-tCD(ns) = 1.8,1.9,2.0 ;; Speed-tcyc (MHz) = 300,277,250 ;; I/o Voltage(V) = 1.5 ;; Package = 119-BGA ;; Production Status = Eol ;; Comments = -

M374S3323DTS-L7C : Unbuffered DIMM Description = M374S3323DTS 32Mx72 Sdram Dimm With Ecc Based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 256 ;; Organization = 32Mx72 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 7A,1H,1L ;; #of Pin = 168 ;; Power = C,l ;; Component Composition = (1

STD80IVTD2 : Standard Cell Libraries Description = STD80 0.5 Micron STD80 Standard Cell Library ;; Supply Voltage (V) = 5 ;; Technology(micron) = 0.5micron

K4D261638F-TC25 : 128mbit GDDR Sdram

K4M28163LH-BF1H : 2M x 16bit x 4 Banks Mobile Sdram in 54fbga

K8D638UTM-LC07 : 64M Bit (8M X8/4m x16) Dual Bank NOR Flash Memory

K6E1004C1B-C20 : 256kx4 Bit (with OE) High Speed Static Ram(5v Operating), Evolutionary Pin out

AT-ST-A-M6-17-D : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB

S3C9228A34-QZR8 : 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDIP42 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 8 MHz ; ROM Type: MROM ; Supply Voltage: 2.7 to 5.5 volts ; I/O Ports: 34 ; Package Type: SDIP, Other, LEAD FREE, SDIP-42 ; Pin Count: 42 ; Operating Temperature: -25 to 85 C (-13 to 185 F)

 
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