|Title||MOSFET N-CH 40V 101A DPAK|
The NVD5CxxxNL family of single N-channel power MOSFETs from ON Semiconductor are housed in a DPAK package and offer robust solutions for automotive applications. Additionally, the NVD5CxxxNL family features low RDS(ON) to minimize conduction losses, low QG and capacitance to minimize driver losses, and are AEC-Q101 qualified and PPAP capable.
|Datasheet||Download NVD5C446NT4G datasheet
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Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CompliantV(BR)DSS 40 V Value 3.1 2.2 IDM TJ, Tstg IS EAS mJ °C DPAK CASE 369C STYLE N-CHANNEL MOSFET Unit
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJC (Notes & 3) Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes Power Dissipation RqJA (Notes & 2) Pulsed Drain Current Steady State = 25°C Steady State 10 ms Symbol VDSS VGS ID
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (TJ = 25°C, IL(pk) 11 A) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
4 Drain AYWW 2 1 Drain 3 Gate Source A = Assembly Location Y = Year WW = Work Week 5C446N= Device Code G = Pb-Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Parameter Junction-to-Case (Drain) (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJC RqJA Value 2.28 48 Unit °C/W
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS 0 V, VDS = 125°C VGS nA V mV/°C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance
CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Plateau Voltage SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS 0.8 46 VGS 0 V, dIs/dt = 100 A/ms, 1.2 V td(on) tr td(off) tf VGS 10 V, VDS W ns Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGP VGS 10 V, VDS 50 A VGS = 1.0 MHz, VDS nC pFReverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures.Figure 4. On-Resistance vs. Drain Current and Gate Voltage
|Some Part number from the same manufacture ON Semiconductor|
The NVD5CxxxNL family of single N-channel power MOSFETs from ON Semiconductor are housed in a DPAK package and offer robust solutions for automotive applications. Additionally, the NVD5CxxxNL