Details, datasheet, quote on part number: ESDZL5-1F4
TitleTVS DIODE 10VC 7A IPP 0201
CompanyST Microelectronics, Inc.
DatasheetDownload ESDZL5-1F4 datasheet
ESDZL5-1F4 photo

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Features, Applications
Low clamping, low capacitance unidirectional single line ESD protection

The is a unidirectional single line TVS diode designed to protect data lines or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required.


Low clamping voltage Unidirectional device Low leakage current 0201 package Ultra-low PCB area: mm2 ECOPACK«2 compliant component Exceeds the following standard: IEC 61000-4-2 level ▒30 kV (air discharge) and ▒15 kV (contact discharge)


Where transient overvoltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phones and accessories Tablets and notebooks Portable multimedia devices and accessories Wearable, home automation, healthcare Highly integrated systems

Table 1: Absolute ratings (Tamb = 25 ░C) Symbol VPP PPP IPP Tj Tstg TL Peak pulse voltage Parameter Contact discharge Air discharge Value +150 260 Unit A ░C

Peak pulse power dissipation (8/20 s) Peak pulse current (8/20 s) Operating junction temperature range Storage temperature range Maximum lead temperature for soldering during 10 s Figure 2: Electrical characteristics (definitions)

Parameter Trigger voltage Clamping voltage Leakage current @ VRM Stand-off voltage Peak pulse current Dynamic resistance Holding voltage Input capacitance per line

Table 2: Electrical characteristics (Tamb = 25 ░C) Symbol VF VTrig VH VRM IRM VCL CLINE RD Notes:

Test condition 10 mA Higher voltage than VTrig guarantees the protection turn-on Lower voltage than VH guarantees the protection turn-off(1)

VRM 8 kV contact discharge after 30 ns, IEC 8 kV contact discharge after 30 ns, IEC 8/20 Ás waveform, IPP MHz, VLINE 0 V, VOSC 30 mV Pulse duration 100 ns

note: when used to protect a line connected a DC source, the DC voltage must be lower than the minimum VH to enable the diode to return to its non-conducting state after the transient.

Figure 3: Leakage current versus junction temperature (typical values)
Figure 4: Junction capacitance versus reverse voltage applied (typical values)
Peak clamping voltage 2 Clamping voltage ns 3 Clamping voltage ns 4 Clamping voltage 100 ns
Peak clamping voltage Clamping voltage 30 ns Clamping voltage ns 4 Clamping voltage 100 ns


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