Details, datasheet, quote on part number: CGHV40200PP
PartCGHV40200PP
CategorySemiconductors => Discrete Semiconductors => Transistors => RF Transistors => RF JFET Transistors => 8844038
TitleRF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt
Description
CompanyWolfspeed
DatasheetDownload CGHV40200PP datasheet
Specifications 
Product CategoryRF JFET Transistors
ManufacturerCree, Inc.
Transistor TypeHEMT
TechnologyGaN
Gain16.1 dB
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage150 V
Vgs - Gate-Source Breakdown Voltage- 10 V, + 2 V
Id - Continuous Drain Current8.7 A
Output Power250 W
Maximum Drain Gate Voltage-
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation166 W
Mounting StyleScrew
Package/Case440199
PackagingTray
BrandWolfspeed / Cree
ConfigurationSingle
Development KitCGHV40200PP-AMP1
Forward Transconductance - Min-
Minimum Operating Temperature- 40 C
Operating Frequency1.7 GHz to 1.9 GHz
Factory Pack Quantity50
Vgs th - Gate-Source Threshold Voltage- 3 V
CGHV40200PP photo

 

Features, Applications

Cree's is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40200PP ideal for linear and compressed amplifier circuits. The transistor is available a 4-lead flange package.

FEATURES
APPLICATIONS

2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms

to 2.7 GHz Operation 21 dB Small Signal Gain at 1.8 GHz 250 W typical PSAT 67 % Efficiency at PSAT 50 V Operation

Absolute Maximum Ratings (not simultaneous) at 25°C Case Temperature

Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque Thermal Resistance, Junction to Case3 Case Operating Temperature

Note: 1 Current limit for long term, reliable operation per side of the device 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library CGHV40200PP at PDISS W. 4 See also, the Power Dissipation De-rating Curve on Page.

Characteristics DC Characteristics1 Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current

Drain-Source Breakdown Voltage RF Characteristics Power Gain Small Signal Gain Power Output Drain Efficiency

Output Mismatch Stress Dynamic Characteristics6 Input Capacitance Output Capacitance Feedback Capacitance

Notes: 1 Measured on wafer prior to packaging per side of device. 2 Scaled from PCM data. 3 Measured CGHV40200PP-TB 4 IDQ is by biasing each device A. 5 Drain Efficiency = POUT / PDC

Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf

Figure 1. - Gain and Return Losses vs Frequency measured in CGHV40200PP-TB Small Signal Gain and Return Loss vs. Frequency CGHV40200PP VDD 50 V, IDQ 1.2 A, Freq GHz

Figure 2. - Output Power and Drain Efficiency vs Frequency measured CGHV40200PP-TB CW Operation, VDD 50 V, IDQ 1.2 A, Output Power @ PIN = 38 dBm


 

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