Details, datasheet, quote on part number: TLP3350(TP15,F)
PartTLP3350(TP15,F)
CategoryOpto-electronics => Optocouplers/Photocouplers => MOSFET Output Optocouplers => 8846312
TitleMOSFET Output Optocouplers Photorelay 1-Form-A VOFF=20V 0.2A 5Ohm
Description
CompanyToshiba
DatasheetDownload TLP3350(TP15,F) datasheet
Specifications 
Product CategoryMOSFET Output Optocouplers
ManufacturerToshiba
Package/CaseUSOP-4
Output TypePhoto MOSFET
Number of Channels1 Channel
Isolation Voltage500 Vrms
If - Forward Current10 mA
Vf - Forward Voltage1.15 V
Vr - Reverse Voltage5 V
Pd - Power Dissipation50 mW
Maximum Operating Temperature+ 85 C
Minimum Operating Temperature- 40 C
PackagingReel
BrandToshiba
Fall Time130 us
Output Current-
Rise Time40 us
Factory Pack Quantity1500
TLP3350(TP15,F) photo

 

Features, Applications

High-Speed Memory Testers High-Speed Logic IC Testers Radio-Frequency Measuring Instruments ATE (Automatic Test Equipment)

The is a photorelay a 4-pin USOP that consists of a photo MOSFET optically coupled with an infrared light emitting diode. The TLP3350 features low output capacitance, COFF, and thus fast on/off switching of a high-frequency signal, making it ideal for switching applications in high-speed testers.

Normally opened (1-Form-A) OFF-state output terminal voltage: 20 V (min) Trigger LED current: 3 mA (max) ON-state current: 200 mA (max) ON-state resistance: 3 (typ.), 5 (max) OFF-state Capacitance: 0.8 pF (typ.), 1.1 pF (max) Isolation voltage: 500 Vrms (min) Safety standard UL-approved: UL1577, File No.E67349

6. Absolute Maximum Ratings (Note) (Unless otherwise specified, 25 )

Characteristics LED Input forward current Input forward current derating Input reverse voltage Input power dissipation Input power dissipation derating Junction temperature Detector OFF-state output terminal voltage ON-state current ON-state current derating ON-state current (pulsed) Output power dissipation Output power dissipation derating Junction temperature Common Storage temperature Operating temperature Lead soldering temperature Isolation voltage (10 s) (AC, 60 s, R.H. 60 (Ta 25 ) (Ta = 100 ms, duty = 1/10) (Ta 25 ) (Ta 25 ) Symbol IF IF/Ta VR PD PD/Ta Tj VOFF ION ION/Ta IONP PO PO/Ta Tj Tstg Topr Tsol BVS (Note 1) Note Rating 260 500 Vrms Unit mA mA/ V mW mW/ V mA mA/ mA mW mW/

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. Caution:This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be guarded against by using proper antistatic precautions for the worktable, operator, solder iron, soldering equipment and so on.

Characteristics Supply voltage Input forward current ON-state current Operating temperature Symbol VDD IF ION Topr Note Min 5 -20 Typ. 7.5 Max Unit V mA

The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered.

Characteristics LED Input forward voltage Input reverse current Input capacitance Detector OFF-state current Output capacitance Symbol IR Ct IOFF COFF Note Test Condition = 1 MHz VOFF = 100 MHz, < 1s Min 1.0 Typ. 15 0.8 Max Unit nA pF

9. Coupled Electrical Characteristics (Unless otherwise specified, 25 )

Characteristics Trigger LED current Return LED current ON-state resistance Symbol IFT IFC RON Note Test Condition ION 100 mA IOFF 10 A ION = 200 mA, = 5 mA, Min 0.1 Typ. 1.0 3 Max 3 5 Unit mA

Characteristics Total capacitance (input to output) Isolation resistance Isolation voltage Symbol CS RS BVS Note Test Condition Min Typ. Max Vdc Unit pF Vrms (Note = 1 MHz (Note 500 V, R.H. 60 % (Note 1) AC, 60 s AC, s in oil DC, s in oil

Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together.

Characteristics Turn-on time Turn-off time Symbol tON tOFF Note Test Condition See Fig. 200 , VDD 5 mA Min Typ. 40 130 Max 200 Unit s

Fig. 11.1 Switching Time Test Circuit and Waveform

 

Some Part number from the same manufacture Toshiba
PN410106 Specifications: For Use With/Related Products: Toshiba MCU ; Module/Board Type: Socket Module - LQFP ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
PN410119
BMP86D030MF3A Specifications: Accessory Type: Target Board ; For Use With/Related Products: RTE870/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
BMP86D032NB0A
BMP86D064DG0A
GT50J102 Specifications: Transistor Type: IGBT ; DC Collector Current: 50A ; Collector Emitter Voltage Vces: 2.1V ; Power Dissipation Pd: 200W ; Collector Emitter Voltage V(br)ceo: 600V ; Operating Temperature
GT10Q101 Specifications: Transistor Type: IGBT ; DC Collector Current: 10A ; Collector Emitter Voltage Vces: 2.7V ; Power Dissipation Pd: 140W ; Collector Emitter Voltage V(br)ceo: 1.2kV ; Operating Temperature
GT15J301 Specifications: Transistor Type: IGBT ; DC Collector Current: 15A ; Collector Emitter Voltage Vces: 2.7V ; Power Dissipation Pd: 35W ; Collector Emitter Voltage V(br)ceo: 600V ; Operating Temperature Range:
GT15Q102
GT25Q102 Specifications: Transistor Type: IGBT ; DC Collector Current: 25A ; Collector Emitter Voltage Vces: 2.7V ; Power Dissipation Pd: 200W ; Collector Emitter Voltage V(br)ceo: 1.2kV ; Operating Temperature
GT30J324 Specifications: Transistor Type: IGBT ; DC Collector Current: 30A ; Collector Emitter Voltage Vces: 2.45V ; Power Dissipation Pd: 170W ; Collector Emitter Voltage V(br)ceo: 600V ; Operating Temperature
GT50J325 Specifications: Transistor Type: IGBT ; DC Collector Current: 50A ; Collector Emitter Voltage Vces: 2.45V ; Power Dissipation Pd: 240W ; Collector Emitter Voltage V(br)ceo: 600V ; Operating Temperature
SSM6N17FU(TE85L,F) Specifications: Transistor Polarity: N Channel ; Continuous Drain Current Id, N Channel: - ; Continuous Drain Current Id, P Channel: - ; Drain Source Voltage Vds, N Channel: - ; Drain Source Voltage Vds,
SSM6N7002FU(TE85LF
SSM6P05FU(TE85L,F) Specifications: Transistor Polarity: P Channel ; Continuous Drain Current Id, N Channel: - ; Continuous Drain Current Id, P Channel: - ; Drain Source Voltage Vds, N Channel: - ; Drain Source Voltage Vds,
2SJ380(F) Specifications: Transistor Polarity: P Channel ; Continuous Drain Current Id: -12A ; Drain Source Voltage Vds: -100V ; On Resistance Rds(on): 0.15ohm ; Rds(on) Test Voltage Vgs: 10V ; Threshold Voltage
2SK3561 Specifications: Transistor Polarity: N Channel ; Continuous Drain Current Id: 8A ; Drain Source Voltage Vds: 500V ; On Resistance Rds(on): 0.75ohm ; Rds(on) Test Voltage Vgs: 10V ; Threshold Voltage Vgs Typ:
ULN2803AFWG Specifications: Module Configuration: Eight ; Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 1.3V ; Transition Frequency Typ ft: - ; Power Dissipation Pd: 1.31W ; DC Collector Current:
ULN2803APG
ULN2804AFWG
ULN2004APG Specifications: Module Configuration: Seven ; Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 50V ; Transition Frequency Typ ft: - ; Power Dissipation Pd: 760mW ; DC Collector Current: - ; DC Current
 
0-C     D-L     M-R     S-Z