Details, datasheet, quote on part number: PGA26E07BA
PartPGA26E07BA
Category
TitleMOSFET MOSFET 600VDC 15A 70mohm X-GaN
DescriptionPanasonic 600V Gallium Nitride (GaN) Power Transistors, with its blocking voltage of 600V, enabling fast stable switching operations. This transistor has a normally-off gate injection for power switching systems that require normally-off operations for safe operations. The GaN transistors contribute to save energies together with smaller system size in a variety of power switching systems for industrial and consumer applications. Features include normally-off gate injection, stable switching operation free from "current collapse", and highly efficient switching at high frequencies.

CompanyPanasonic - ATG
DatasheetDownload PGA26E07BA datasheet
  
PGA26E07BA photo

Others parts numbering
PGA26E07BA-SWEVB008: Power Management IC Development Tools 600Vdc 70mOhm X-GaN 1/2 Bridge EVB
PGA26E19BA-SWEVB008: Power Management IC Development Tools 600Vdc 190mOhm X-GaN 1/2 Bridge EVB
PGA26E07BA-SWEVB006: Power Management IC Development Tools 600Vdc 70mOhm X-GaN Chopper EVB
PGA26E19BA-DB001: Power Management IC Development Tools SMD-ThruHole ConvKit 600VDC 190mohm X-GaN
PGA26E19BA: MOSFET MOSFET 600VDC 190mohm X-GaN
PGA26E19BA-SWEVB006: Power Management IC Development Tools 600Vdc 190mOhm X-GaN Chopper EVB
AN34092B: Gate Drivers X-Gan Driver Eng Prototype Sample
PGA26E07BA-DB001: Power Management IC Development Tools SMD-ThruHole ConvKit 600VDC 70mohm X-GaN

 

Features, Applications

Type Application Structure Equivalent Circuit Out Line GaN-Tr For power switching N-channel enhancement mode FET Figure 1 DFN 8X8 Marking PGA26E07

A. ABSOLUTE MAXIMUM RATINGS OC , unless otherwise specified ) Values No. Item Symbol Min. Typ. Max. Drain-source voltage ) *1 Drain-source voltage ( pulse ) *2 Gate-source voltage ) *1 Gate current ) *1 Gate current ( pulse ) *3,4 Electric gate charge Drain current ) *1 Drain reverse current ) *1 Drain current ( pulse OC )*1 Drain reverse current ( pulse OC )*1 Power dissipation OC ) Junction temperature Storage temperature Drain-source voltage slope VDSS VDSP VGSS IG IGP QGP ID IDR ID pulse IDR pulse PD Tj Tstg dv/dt

*VGSS+ is given by IG ratings *See application note *See application note *See application note *f200kH *See application note

[Special instructions] *1 : Please use this product to meet a condition of Tj within 150 OC. *2 : Spike duty cycle < 0.1, spike duration < 1us, total spike time *3 : IGP is defined as (Vcc - Vplateau) / Rgon, as shown in Figure A. Vplateau is the voltage between Gate and *4 : Please use this product to meet both a maximum gate current and a maximum gate pulse charge of IGP(1.5A) and Q(32nC) respectively, as shown in Figure *5 : Pulse width limited by Tjmax. Established: Revised: 2016-09-01 2017-01-16 Page of 11

B. ELECTRICAL CHARACTERISTICS No. Item OC , unless otherwise specified ) Symbol Measurement Condition

Gate-source leakage current Gate forward voltage Gate threshold voltage

Gate resistance Transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Effective output capacitance ( energy related ) Effective output capacitance ( time related )

RG gfs Ciss Coss Crss td(on) tr td(off) tf Co(er)

 

Some Part number from the same manufacture Panasonic - ATG
PGA26E07BA-SWEVB008 Panasonic 600V Gallium Nitride (GaN) Power Transistors, with its blocking voltage of 600V, enabling fast stable switching operations. This transistor has a normally-off gate injection for power switching
PGA26E19BA-SWEVB008
PGA26E07BA-SWEVB006
PGA26E19BA-DB001
PGA26E19BA
PGA26E19BA-SWEVB006
AN34092B
PGA26E07BA-DB001
 
0-C     D-L     M-R     S-Z