Details, datasheet, quote on part number: DRV5012AEDMRT
PartDRV5012AEDMRT
CategorySemiconductors => Sensing Products => Magnetic Sensors => Hall Effect Sensors => Digital Hall Effect Sensors
Part familyDRV5012 Ultra-Low Power Digital-Latch Hall Effect Sensor
TitleULTRA-LOW POWER DIGITAL-LATCH HA
DescriptionUltra-Low Power Digital-Latch Hall Effect Sensor 4-X2SON -40 to 85
CompanyTexas Instruments Inc.
StatusACTIVE
ROHSY
SampleNo
DatasheetDownload DRV5012AEDMRT datasheet
Specifications 
Operate Point(Max)(mT)3.3
Approx. Price (US$)0.30 | 1ku
OutputPush-pull output driver
Operating Temperature Range(C)-40 to 85
RatingCatalog
Supply Voltage (Vcc)(Min)(V)1.65
Package GroupX2SON
Release Point(Min)(mT)-3.3
ICC(mA)0.0013,0.142
Supply Voltage (Vcc)(Max)(V)5.5
TypeLatch
Bandwidth(kHz)0.020,2.5
  Mecanical Data
Pin nbPackage typeInd stdJEDEC codePackage qtyCarrierDevice markWidth (mm)Length (mm)Thick (mm)Pitch (mm)
4DMRX2SONR-PSSO-N250SMALL T&R2AE 1.11.4.4.5
Application notes
• Power Gating Systems with Magnetic Sensors (Rev. A) | Doc
• Incremental Rotary Encoder Design Considerations | Doc

Others parts numbering
DRV5012AEDMRR: LP HALL 12AEDMRR

 

Features, Applications

The DRV5012 device is an ultra-low-power digitallatch Hall effect sensor with a pin-selectable sampling rate. When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOP and BRP to provide robust switching. Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power. The device operates from a VCC range 5.5 V, and is packaged in a small X2SON. Device Information(1)

PART NUMBER DRV5012 PACKAGE X2SON (4) BODY SIZE (NOM) 1.40 mm

Industry-Leading Low-Power Consumption Pin-Selectable Sampling Rate: SEL = Low: 20 Hz Using V) SEL = High: 2.5 kHz Using to 5.5-V Operating VCC Range High Magnetic Sensitivity: 2 mT (Typical) Robust Hysteresis: 4 mT (Typical) Push-Pull CMOS Output Small and Thin X2SON Package to +85C Operating Temperature Range

Brushless DC Motor Sensors Incremental Rotary Encoding: Motor Speed Mechanical Travel Fluid Measurement Knob Turning Wheel Speed Portable Medical Devices E-Locks, E-Bikes, Motorized Blinds Flow Meters Contactless Activation

(1) For all available packages, see the orderable addendum at the end of the data sheet.

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.

Features.................................................................. Applications........................................................... Description............................................................. Revision History..................................................... Pin Configuration and Functions......................... Specifications.........................................................

Absolute Maximum Ratings...................................... ESD Ratings............................................................ Recommended Operating Conditions....................... Thermal Information.................................................. Electrical Characteristics........................................... Magnetic Characteristics........................................... Typical Characteristics..............................................

8.1 Application Information............................................ 11 8.2 Typical Applications............................................... 11 8.3 Do's and Don'ts....................................................... 15

Device Support...................................................... Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks........................................................... Electrostatic Discharge Caution............................ Glossary................................................................

7.1 Overview................................................................... 7 7.2 Functional Block Diagram......................................... 7 7.3 Feature Description................................................... 7

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
DATE August 2017 REVISION * NOTES Initial release.
Submit Documentation Feedback Product Folder Links: DRV5012

PIN NAME GND OUT SEL VCC Thermal Pad NO. PAD I/O O I Ground reference Push-pull CMOS output. Drives a VCC or ground level. CMOS input that selects the sampling rate: a low voltage sets 20 Hz; a high voltage sets 2.5 kHz. to 5.5-V power supply. TI recommends connecting this pin to a ceramic capacitor to ground with a value of at least 0.1 F. No-connect. This pin should be left floating or tied to ground. It should be soldered to the board for mechanical support. DESCRIPTION

over operating free-air temperature range (unless otherwise noted) (1)

MIN Power supply voltage Power supply voltage slew rate Output voltage Output current Input voltage Magnetic flux density, BMAX Junction temperature, TJ Storage temperature, Tstg (1) 65 VCC OUT SEL 5 0.3 Unlimited 150 0.3 Unlimited VCC 0.3 5 VCC + 0.3 MAX 5.5 UNIT T C

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

VALUE Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 V(ESD) (1) (2) Electrostatic discharge

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.


 

Some Part number from the same manufacture Texas Instruments Inc.
DRV5012AEDMRR

Texas Instruments' DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate.



 
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