Details, datasheet, quote on part number: LSIC1MO120E0080
PartLSIC1MO120E0080
Category
TitleMOSFET SIC 1200V 25A TO-247-3L
Description

Littelfuse's SiC MOSFET LSIC1MO120E0080 provides a combination of low on-resistance and ultra-low switching losses unavailable with traditional 1200 V class power transistors. The robust design of this first SiC MOSFET accommodates a wider range of high temperature applications. Smaller heat sinks and increased power density create a higher efficiency and smaller passive filter and increased power density create higher switching frequencies. The device has a smaller die size per voltage/current rating.



CompanyLittelfuse
DatasheetDownload LSIC1MO120E0080 datasheet
  
LSIC1MO120E0080 photo

 

Features, Applications

Features O ptimized for highfrequency, high-efficiency applications E xtremely low gate charge and output capacitance

Environmental L ittelfuse "RoHS" logo = RoHS conform L ittelfuse "HF" logo = Halogen Free L ittelfuse "Pb-free" logo = Pb Pb-free lead plating

Applications H igh-frequency applications S olar Inverters S witch Mode Power Supplies U PS Motor Drives H igh Voltage DC/DC Converters Battery Chargers Induction Heating

2017 Littelfuse, Inc. Specifications are subject to change without notice. Rev 0.2, Revised: 09/04/17

Characteristics Continuous Drain Current Pulsed Drain Current 1 Power Dissipation Operating Junction Temperature Symbol ID ID(pulse) PD TJ VGS,MAX Gate-source Voltage VGS,OP,TR VGS,OP Storage Temperature Lead Temperature for Soldering Mounting Torque Footnote 1: Pulse width limited by TJ,max TSTG Tsold MD Absolute maximum values Transient, <1% duty cycle Recommended DC operating values or 6-32 screw Conditions VGS 25 C VGS = 25 C, 150 C Value C Nm in-lb V Unit W C

Characteristics Maximum Thermal Resistance, junction-to-case Maximum Thermal Resistance, junction-to-ambient Symbol Rth,JC,max Rth,JA,max Value 0.7 40 Unit C/W

Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-source On-state Resistance Gate Threshold Voltage Gate Resistance V(BR)DSS IDSS IGSS,F IGSS,R RDS(ON) VGS,(th) RG VGS 250 A VDS 1200 V, VGS 0 V VDS 1200 V, VGS 150 C VGS 20 V, VDS 0 V VGS -10 V, VDS 20 A, VGS 20 A, VGS 150 C VDS = VGS, 10 mA VDS = VGS, = 10 mA, = 1 MHz, VAC 25 mV

Turn-on Switching Energy Turn-off Switching Energy Total Per-cycle Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance COSS Stored Energy Total Gate Charge Gate-source Charge Gate-drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time EON EOFF ETS CISS COSS CRSS EOSS Qg Qgs Qgd td(on) tr td(off) tf VDD 20 A, VGS -5/+20 V, RG,ext 1.4 mH

Diode Forward Voltage Continuous Diode Forward Current Peak Diode Forward Current 1 Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current Footnote 1: Pulse width limited by TJ,max


 

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