parts list category Discrete - Transistors - FETs (Field Effect Transistors) - MESFET page 0


ADP3110A: Dual Bootstrapped, 12 V MOSFET Driver with Output DisableThe ADP3110A is a dual, high voltage MOSF

ADP3110AKCPZ-RL: Dual Bootstrapped, 12 V MOSFET Driver with Output DisableThe ADP3110A is a dual, high voltage MOSF

ADP3110AKRZ: Dual Bootstrapped, 12 V MOSFET Driver with Output DisableThe ADP3110A is a dual, high voltage MOSF

ADP3110AKRZ-RL: Dual Bootstrapped, 12 V MOSFET Driver with Output DisableThe ADP3110A is a dual, high voltage MOSF

ADP3120A: Dual Bootstrapped, 12 V MOSFET Driver with Output DisableThe ADP3120A is a dual, high voltage MOSF

ADP3120AJCPZ-RL1: Dual Bootstrapped, 12 V MOSFET Driver with Output DisableThe ADP3120A is a dual, high voltage MOSF

ADP3120AJRZ-RL1: Dual Bootstrapped, 12 V MOSFET Driver with Output DisableThe ADP3120A is a dual, high voltage MOSF

ADP3120AJRZ1: Dual Bootstrapped, 12 V MOSFET Driver with Output DisableThe ADP3120A is a dual, high voltage MOSF

ADP3418: Dual Boostrapped 12 V MOSFET Driver with Output DisableThe ADP3418 is a dual, high voltage MOSFET

ADP3418KRZ1: Dual Boostrapped 12 V MOSFET Driver with Output DisableThe ADP3418 is a dual, high voltage MOSFET

ALD110914: Dual N-Ch Enhancement Mode

ALD110914PA: Dual N-Ch Enhancement Mode

ALD110914SA: Dual N-Ch Enhancement Mode

APT19F100J: Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.This 'FREDFET' versi

APT21M100J: Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.A proprietary planar

APT22F12B2: Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.A proprietary planar

APT29F100L: Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.This 'FREDFET' versi

APT30M60J: These new MOS 8 MOSFET and FREDFET devices are designed for high power, high performance switch mode

APT31M100L: Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.A proprietary planar

APT34F60B: These new MOS 8 MOSFET and FREDFET devices are designed for high power, high performance switch mode

APT34M60B: These new MOS 8 MOSFET and FREDFET devices are designed for high power, high performance switch mode

APT38M50J: These new MOS 8 MOSFET and FREDFET devices are designed for high power, high performance switch mode

APT42F50B: These new MOS 8 MOSFET and FREDFET devices are designed for high power, high performance switch mode

APT43M60L: These new MOS 8 MOSFET and FREDFET devices are designed for high power, high performance switch mode

APT51M50J: These new MOS 8 MOSFET and FREDFET devices are designed for high power, high performance switch mode

APT56M50L: These new MOS 8 MOSFET and FREDFET devices are designed for high power, high performance switch mode

APT75M50B2: These new MOS 8 MOSFET and FREDFET devices are designed for high power, high performance switch mode

CFY25-17: Hirel X-band GAAS Low Noise / General Purpose MesFET

CFY25-20: Hirel X-band GAAS Low Noise / General Purpose MesFET

CFY25-23: Hirel X-band GAAS Low Noise / General Purpose MesFET

CRF22010:

CRF24010:

EIA5060-1S: 8 Volt Internally Matched Power FETs (MFETs)

EIA7785-2: 8 Volt Internally Matched Power FETs (MFETs)

EIA7785-6: 8 Volt Internally Matched Power FETs (MFETs)

EIB3439-4P: 8 Volt Internally Matched Power FETs (MFETs)

FDFMJ2P023Z: MOSFET And Schottky DiodeThis device is designed specifically as a single package solutionfor th

FDS8812NZ: 30V N-Channel PowerTrench MOSFETThis N–Channel MOSFET is produced using Fairchild Semiconductor's

FDS8813NZ: 30V N-Channel PowerTrench MOSFETThis N–Channel MOSFET is produced using Fairchild Semiconductor's

FMK 75-01F: Dual Switch (Common Source) Modules * 70V - 900V, Single, Dual, Buck & Boost HiPerFET MOSFET

FMK 75-01F: Dual Switch (Common Source) Modules * 70V - 900V, Single, Dual, Buck & Boost HiPerFET MOSFET

FMM 150-0075P: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

FMM 150-0075P: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

FMM140-004P: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

FMM140-004P: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

FMM151-0075P: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

FMM151-0075P: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

FMM300-0055P: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

FMM300-0055P: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

GWM120-0075P3: Six-Pack MOSFET Modules * 40V - 75V, Three phase output MOSFET Modules * 125A - 220A, Cu

GWM120-0075P3: Six-Pack MOSFET Modules * 40V - 75V, Three phase output MOSFET Modules * 125A - 220A, Cu

HT45B0C: The devices are for power MOSFET gate drivers, which interface directly to driver the power MOSFET.

IRHLUB770Z4: 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a UB Surface Mount package

IRHLUB7970Z4: 60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package

IXFC110N10P: Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic

IXFC110N10P: Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic

IXFH110N10P: Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic

IXFH140N10P: Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic

IXFH170N10P: Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic

IXFK170N10P: Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic

IXFK170N10P: Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic

IXFT140N10P: Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic

IXFT140N10P: Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic

IXFV110N10P: Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic

IXFV110N10PS: Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic

IXFV110N10PS: Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic

IXTH10N100D: Six-Pack MOSFET Modules * 40V - 75V, Three phase output MOSFET Modules * 125A - 220A, Cu

IXTH10N100D: Six-Pack MOSFET Modules * 40V - 75V, Three phase output MOSFET Modules * 125A - 220A, Cu

KHB1D0N60D: High Voltage MOSFETs This planar stripe MOSFET has better characteristics, such as fastswitching

KHB1D0N60D: High Voltage MOSFETs This planar stripe MOSFET has better characteristics, such as fastswitching

KHB1D0N60I: High Voltage MOSFETs This planar stripe MOSFET has better characteristics, such as fastswitching

KHB1D0N60I: High Voltage MOSFETs This planar stripe MOSFET has better characteristics, such as fastswitching

KHB2D0N60F: High Voltage MOSFETs This planar stripe MOSFET has better characteristics, such as fastswitching

KHB2D0N60F: High Voltage MOSFETs This planar stripe MOSFET has better characteristics, such as fastswitching

KHB2D0N60P: High Voltage MOSFETs This planar stripe MOSFET has better characteristics, such as fastswitching

KHB2D0N60P: High Voltage MOSFETs This planar stripe MOSFET has better characteristics, such as fastswitching

KHB4D5N60P: High Voltage MOSFETs This planar stripe MOSFET has better characteristics, such as fastswitching

KHB4D5N60P: High Voltage MOSFETs This planar stripe MOSFET has better characteristics, such as fastswitching

LM5111: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-1M: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-1MX: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-1MY: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-1MY: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-1MYX: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-1MYX: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-1MYX: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-2MX: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-2MY: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-2MYX: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-3MX: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-3MY: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5111-3MYX: Dual 5A Compound Gate DriverThe LM5111 Dual Gate Driver replaces industry standard gate drivers wi

LM5112: Tiny 7A MOSFET Gate DriverThe LM5112 MOSFET gate driver provides high peak gate drive current in t

LM5112MY: Tiny 7A MOSFET Gate DriverThe LM5112 MOSFET gate driver provides high peak gate drive current in t

LM5112MYX: Tiny 7A MOSFET Gate DriverThe LM5112 MOSFET gate driver provides high peak gate drive current in t

LM5112SD: Tiny 7A MOSFET Gate DriverThe LM5112 MOSFET gate driver provides high peak gate drive current in t

LM5112SDX: Tiny 7A MOSFET Gate DriverThe LM5112 MOSFET gate driver provides high peak gate drive current in t

MRF1511N: MRF1511NT1 175 MHz, 8 W, 7.5 V, Lateral N-Channel Broadband RF Power MOSFET

MRF6P23190HR6: 2400 MHz, 40 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFETThe MRF6P23190HR6 is design...

MRFG35010: 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMTThe MRFG35010 is designed for WLL/MMDS or UMTS driver appl

NE5511279A: NEC's 7.5 V UHF Band RF Power Silicon LD-MOSFET NEC's NE5511279A is an N-Channel silicon power lat

NE5511279A-T1-A: NEC's 7.5 V UHF Band RF Power Silicon LD-MOSFET NEC's NE5511279A is an N-Channel silicon power lat

NE5511279A-T1A-A: NEC's 7.5 V UHF Band RF Power Silicon LD-MOSFET NEC's NE5511279A is an N-Channel silicon power lat

NE5520279A: NEC's 3.2 V, 2 W, L&S Band Medium Power Silicon LD-MOSFETNEC's NE5520279A is an N-Channel silicon

NE552R479A: NEC's 3.0 V, 0.25 W, L&S Band Medium Power Silicon LD-MOSFETNEC's NE552R479A is an N-Channel silic

NE55410G: N-Channel Silicon Power LDMOS FET For 2 W + 10 W VHF to L-Band Single-End Power AmplifierThe NE554

NE58219: NPN Silicon Expitaxial Transistor 3 Pins Ultra Super Mini MoldNEC's NE58219 is a low supply voltag

NE58219-T1-A: NPN Silicon Expitaxial Transistor 3 Pins Ultra Super Mini MoldNEC's NE58219 is a low supply voltag

NE650103M: 10 W, L & S-Band Power GaAs MESFETNEC's NE650103M is a 10 W GaAs MESFET designed forPCS, W-CDMA,

NE650103M-A: 10 W, L & S-Band Power GaAs MESFETNEC's NE650103M is a 10 W GaAs MESFET designed forPCS, W-CDMA,

NTB5404N: Power MOSFET 40 V, 136 A, N-Channel D2PAKPower MOSFET 40 V, 136 A, N-Channel D2PAK

NTB5404NT4G: Power MOSFET 40 V, 136 A, N-Channel D2PAKPower MOSFET 40 V, 136 A, N-Channel D2PAK

NTB5405N: * Low RDS(on) * High Current Capability * Low Gate Charge * These are Pb-Free D

NTB5405NG: * Low RDS(on) * High Current Capability * Low Gate Charge * These are Pb-Free D

NTD5406N: Power MOSFET 40 V, 70 A, Single N-Channel, DPAK * Low RDS(on) * High Current Capability

NTD5406NG: Power MOSFET 40 V, 70 A, Single N-Channel, DPAK * Low RDS(on) * High Current Capability

NTD5407N: Power MOSFET 40 V, 38 A, Single N-Channel, DPAK * Low RDS(on) * High Current Capability

NTD5407NG: Power MOSFET 40 V, 38 A, Single N-Channel, DPAK * Low RDS(on) * High Current Capability

PMD2001D: NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SM

PMD3001D: NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SM

PMD4001K: NPN transistor and high-speed switching diode to protect the base-emitter junction in reverse direct

PMD4001K: NPN transistor and high-speed switching diode to protect the base-emitter junction in reverse direct

PMD4002K: NPN switching transistor and high-speed switching diode to protect the base-emitter junction in reve

PMD4002K: NPN switching transistor and high-speed switching diode to protect the base-emitter junction in reve

PMD4003K: NPN low VCEsat Breakthrough In Small Signal (BISS) transistor and high-speed switching diode to prot

PMD4003K: NPN low VCEsat Breakthrough In Small Signal (BISS) transistor and high-speed switching diode to prot

PMD5001K: PNP transistor and high-speed switching diode to protect the base-emitter junction in reverse direct

PMD5001K: PNP transistor and high-speed switching diode to protect the base-emitter junction in reverse direct

PMD5003K: PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and high-speed switching diode to prot

PMD5003K: PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and high-speed switching diode to prot

R2J20601NP: The R2J20601NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET dri

STB200N04: A free-form text description of the package type.Automotive Product Status of compliancy of the pa

STD7NM80: This product is realized thank to the MDmesh™Technology. This revolutionary Power MOSFETassociat

STD7NM80-1: This product is realized thank to the MDmesh™Technology. This revolutionary Power MOSFETassociat

STF7NM80: This product is realized thank to the MDmesh™Technology. This revolutionary Power MOSFETassociat

STP75NS04Z: N-channel Clamped - 7mOhm - 80A - TO-220 Fully protected MESH Overlay III Power MOSFETThis fully c

STP7NM80: This product is realized thank to the MDmesh™Technology. This revolutionary Power MOSFETassociat

TC1411: The TC1411/TC1411N are 1A CMOS buffers/drivers.They will not latch-up under any conditions within

TC1411N: The TC1411/TC1411N are 1A CMOS buffers/drivers.They will not latch-up under any conditions within

VBH40-05B: H-Bridge MOSFET Modules * 70V - 900V, Single, Dual, Buck & Boost HiPerFET MOSFET Modules

VBH40-05B: H-Bridge MOSFET Modules * 70V - 900V, Single, Dual, Buck & Boost HiPerFET MOSFET Modules

VMK90-02T2: Dual Switch (Common Source) Modules * 70V - 900V, Single, Dual, Buck & Boost HiPerFET MOSFET

VMK90-02T2: Dual Switch (Common Source) Modules * 70V - 900V, Single, Dual, Buck & Boost HiPerFET MOSFET

VMM1500-075P: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

VMM1500-075P: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

VMM300-03F: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

VMM300-03F: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

VMM90-09F: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

VMM90-09F: Half Bridge MOSFET Modules * 40V - 900V, Single, Dual, Buck & Boost MOSFET Modules * 21A

VWM350-0075P: Six-Pack MOSFET Modules * 40V - 75V, Three phase output MOSFET Modules * 125A - 220A, Cu

 
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