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Details, datasheet, quote on part number:07F8483
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH6284/D
Darlington Complementary Silicon Power Transistors
. . . designed for generalpurpose amplifier and lowspeed switching motor control applications. · Similar to the Popular NPN 2N6284 and the PNP 2N6287 · Rugged RBSOA Characteristics · Monolithic Construction with Builtin CollectorEmitter Diode
MJH6284 PNP MJH6287
Motorola Preferred Devices
NPN
DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS 160 WATTS
PD , POWER DISSIPATION (WATTS)
ÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB Max 100 100 5.0 20 40 Unit Vdc Vdc Vdc Adc Adc CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current -- Continuous Peak Base Current 0.5 Total Device Dissipation @ TC = 25_C Derate above 25_C PD Watts W/_C 160 1.28 Operating and Storage Junction Temperature Range TJ, Tstg 65 to + 150
CASE 340D02
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC
Max
Unit
Thermal Resistance, Junction to Case
0.78
_C/W
160
140 120 100 80 60 40 20 0
0
25
50 75 100 125 150 TC, CASE TEMPERATURE (°C)
175
200
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
© Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data
1
ÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎ Î Î Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJH6284 MJH6287
(1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2.0%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
V1 APPROX 8.0 V
V2 APPROX +12 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA
Fall Time
Storage Time
Rise Time
Delay Time
SmallSignal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
CurrentGain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
BaseEmitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc)
BaseEmitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc)
CollectorEmitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) CollectorEmitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc)
DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) DC Current Gain (IC = 20 Adc, VCE = 3.0 Vdc)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
Collector Cutoff Current (VCE = 50 Vdc, IB = 0)
CollectorEmitter Sustaining Voltage (IC = 0.1 Adc, IB = 0)
2
tr, tf, 10 ns DUTY CYCLE = 1.0% 0 For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
25 µs
30 Vdc, VCC = 30 Vd IC = 10 Adc 10 Ad IB1 = IB2 = 100 mA 100 mA Duty Cycle = 1.0% y
51
RB
D1
+ 4.0 V
Resistive L d Load
Characteristic
for td and tr, D1 is disconnected and V2 = 0
8.0 k
TUT
50
VCC 30 V
RC SCOPE
BASE
MJH6284 MJH6287
NPN MJH6284
Motorola Bipolar Power Transistor Device Data Figure 3. Darlington Schematic
COLLECTOR VCEO(sus) EMITTER VCE(sat) VBE(sat) VBE(on) Symbol Symbol ICEO IEBO ICEX Cob hFE hfe fT td ts tr tf BASE NPN Min 300 750 100 100 3.5 1.0 0.3 0.1 4.0 -- -- -- -- -- -- -- -- -- -- Typical PNP MJH6287 18,000 -- PNP Max 400 600 2.0 1.0 0.3 0.1 4.0 2.8 2.0 3.0 2.0 0.5 5.0 1.0 -- -- -- COLLECTOR EMITTER mAdc mAdc mAdc MHz Unit Unit Vdc Vdc Vdc Vdc pF -- -- µs
MJH6284 MJH6287
r(t) , EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 SINGLE PULSE RJC(t) = r(t) RJC RJC = 0.78°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 P(pk) D = 0.5 0.2
t1
t2
DUTY CYCLE, D = t1/t2 100 200 300 500 1000
0.02 0.03
0.05
Figure 4. Thermal Response
FBSOA, FORWARD BIAS SAFE OPERATING AREA
50 IC, COLLECTOR CURRENT (AMPS) 20 10 5.0 2.0 1.0 0.5
SECOND BREAKDOWN LIMITED
0.1 ms 0.5 ms 1.0 ms 5.0 ms
dc
TJ = 150°C
0.2 0.1 0.05 2.0
BONDING WIRE LIMITED THERMAL LIMITATION @TC = 25°C (SINGLE PULSE)
20 50 5.0 10 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
100
Figure 5. MJH6284, MJH6287
50 IC, COLLECTOR CURRENT (AMPS)
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J ( p k ) = 150_C; TC is variable depending on conditions. Second breakdown pulse l i m i t s are valid for duty cycles to 10% provided T J ( p k ) 150 _ C . T J ( p k ) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
40
30 DUTY CYCLE = 10% 20 L = 200 µH IC/IB 100 TC = 25°C VBE(off) = 0 5.0 V RBE = 47 0 10 20 40 80 30 100 60 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 110
10
v
0
Figure 6. Maximum RBSOA, Reverse Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3
MJH6284 MJH6287
NPN
3000 2000 hFE, DC CURRENT GAIN VCE = 3.0 V hFE, DC CURRENT GAIN TJ = 150°C 1000 25°C 500 300 200 150 0.2 0.3 0.5 55°C 1.0 2.0 3.0 5.0 7.0 10 20 3000 2000 5000 VCE = 3.0 V TJ = 150°C 25°C
PNP
1000 700 500 300 0.2 55°C
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 7. DC Current Gain
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 1.0 2.0 3.0 5.0 10 20 30 IC = 5.0 A 50 100 200 300 500 1000 IC = 10 A IC = 15 A TJ = 25°C
2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 1.0 2.0 3.0 5.0 10 20 30 50 IC = 5.0 A 100 200 300 500 1000 IC = 10 A IC = 15 A
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
3.0 TJ = 25°C V, VOLTAGE (VOLTS)
3.0 TJ = 25°C
2.5 V, VOLTAGE (VOLTS)
2.5
2.0 VBE @ VCE = 3.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
2.0 VBE(sat) @ IC/IB = 250 1.5 VBE(on) @ VCE = 3.0 V
1.5
1.0
1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 9. "On" Voltages
4
Motorola Bipolar Power Transistor Device Data
MJH6284 MJH6287
PACKAGE DIMENSIONS
C B Q E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069
U S K L
1 2
4
A
3
D V G
J H
DIM A B C D E G H J K L Q S U V
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 340D02 ISSUE B
Motorola Bipolar Power Transistor Device Data
5
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