|
Details, datasheet, quote on part number:1N4448/A52R
| |
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
1N4148; 1N4448 High-speed diodes
Product specification Supersedes data of 1996 Sep 03 1999 May 25
Philips Semiconductors
Product specification
High-speed diodes
FEATURES · Hermetically sealed leaded glass SOD27 (DO-35) package · High switching speed: max. 4 ns · General application · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 75 V · Repetitive peak forward current: max. 450 mA.
The diodes are type branded.
handbook, halfpage k
1N4148; 1N4448
DESCRIPTION The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
a
MAM246
APPLICATIONS · High-speed switching.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - -65 - 4 1 0.5 500 +200 200 A A A mW °C °C see Fig.2; note 1 CONDITIONS - - - - MIN. MAX. 75 75 200 450 V V mA mA UNIT
1999 May 25
2
Philips Semiconductors
Product specification
High-speed diodes
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF 1N4148 1N4448 IR IR Cd trr reverse current reverse current; 1N4448 diode capacitance reverse recovery time PARAMETER forward voltage see Fig.3 IF = 10 mA IF = 5 mA IF = 100 mA VR = 20 V; see Fig.5 VR = 20 V; Tj = 150 °C; see Fig.5 VR = 20 V; Tj = 100 °C; see Fig.5 f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 50 mA; tr = 20 ns; see Fig.8 - - - - CONDITIONS
1N4148; 1N4448
MIN. 1
MAX. V V V
UNIT
0.62 -
0.72 1 25 50 3 4 4
nA µA µA pF ns
Vfr
forward recovery voltage
2.5
V
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 350 UNIT K/W K/W
1999 May 25
3
Philips Semiconductors
Product specification
High-speed diodes
GRAPHICAL DATA
1N4148; 1N4448
handbook, halfpage
300
MBG451
handbook, halfpage
600
MBG464
IF (mA) 200
IF (mA) 400
(1) (2) (3)
100
200
0 0 100 Tamb (oC) 200
0 0 (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. 1 VF (V) 2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 Based on square wave currents. Tj = 25 °C prior to surge. 10
102
103
tp (µs)
104
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 25
4
Philips Semiconductors
Product specification
High-speed diodes
1N4148; 1N4448
103 handbook, halfpage IR (µA)
MGD290
MGD004
handbook, halfpage
1.2
10
2
Cd (pF) 1.0
(1) (2)
10 0.8 1
10-1
0.6
10-2 0 100 Tj (oC) 200
0.4 0 10 VR (V) 20
(1) VR = 75 V; typical values. (2) VR = 20 V; typical values. f = 1 MHz; Tj = 25 °C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
1999 May 25
5
|
|
