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Details, datasheet, quote on part number:1N458A
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Datasheet text preview:
1N/FDLL 456/A / 457/A / 458/A / 459/A
Discrete POWER & Signal Technologies
N
1N/FDLL 456/A - 1N/FDLL 459/A
COLOR BAND MARKING DEVICE FDLL456 FDLL456 A FDLL457 FDLL457 A FDLL458 FDLL458 A FDLL459 FDLL459 A 1ST BAND 2ND BAND BROWN BROWN RED RED RED RED RED RED WHITE WHITE BLACK BLACK BROWN BROWN RED RED
LL-34 DO-35
THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
High Conductance Low Leakage Diode
Sourced from Process 1M.
Absolute Maximum Ratings*
Symb ol
W IV W or king Inverse Voltage
TA = 25°C unless otherwise noted
Parameter
456/A 457/A 458/A 459/A
Valu e
25 60 125 175 200 500 600 1.0 4.0 -65 to +200 175
Un its
V V V V mA mA mA A A °C °C
IO IF if if(surge)
Average Rectified Current DC Forward Current Recur rent Peak Forward Current Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Oper ating Junction Temperature
Tst g TJ
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symb ol
PD RJA
TA = 25°C unless otherwise noted
Ch aracteristic
Tot al Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
1N / FDLL 456/A - 459/A 500 3.33 300
Un its
mW mW / °C °C/W
1N/FDLL 456/A / 457/A / 458/A / 459/A
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics
Symbol
BV
TA = 25°C unless otherwise noted
Parameter
Breakdown Voltage 456/A 457/A 458/A 459/A 456/A 457/A 458/A 459/A
T est Conditions
I R = 100 µA I R = 100 µA I R = 100 µA I R = 100 µA VR = 25 V VR = 25 V, TA = 150°C VR = 60 V VR = 60 V, TA = 150°C VR = 125 V VR = 125 V, TA = 150°C VR = 175 V VR = 175 V, TA = 150°C I F = 40 mA I F = 10 mA I F = 7.0 mA I F = 3.0 mA I F = 100 mA VR = 0, f = 1.0 MHz
Min
30 70 150 200
Max
Un its
V V V V nA µA nA µA nA µA nA µA V V V V V pF
IR
Reverse Current
VF
Forwar d Voltage
456 457 458 459 456/A- 459/ A
CO
Diode Capacitance
25 5.0 25 5.0 25 5.0 25 5.0 1.0 1.0 1.0 1.0 1.0 6.0
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