|Category||Discrete => Solid State relays|
|Description||Relay 2pole 24vdc|
|Datasheet||Download 5-1393090-0 datasheet
2 C/O or 3 C/O contacts Cadmium-free contacts DC and AC coils Mechanical indicator as standard Electrical indicator New test system with front operated finger protected push-to-test button and integral locking test tab White write on panel Applications Mechanical engineering, plant control
Contact data Configuration 2 C/O contacts or 3 C/O contacts Type of contact single cont. bifurcated cont. Rated current A 4A Rated voltage / max.breaking voltage 250 Vac / 440 Vac Rated breaking capacity 500 VA Make current (max. s at duty cycle A 8A Contact material AgNi 90/10Contact life Type Load A, 250 Vac, C/O contact
DC coil AC coil Nominal coil power DC coil AC coil Operate category
Coil versions, DC-coil Coil code Nominal Pull-in Release Coil standard PD* voltage resistance current Vdc 1B0 2C0 All figures are given for coil without preenergization, at ambient temperature +20°C * Protection diode PD; standard polarity: 2-pole relays: -7, 3-pole relays: / -10
Coil versions, AC-coil Coil Nominal Pull-in Release Maximum Coil code voltage resistance current Vac c mA All figures are given for coil without preenergization, at ambient temperature +20°C Insulation Dielectric strength coil-contacts open contact circuit adjacent contacts Clearance / creepage Insulation to IEC 0110 (1/89) Voltage rating Pollution degree Overvoltage category Insulation to VDE 0110b (2/79) Tracking resistance Other data Flammability class UL Ambient temperature
V-0 DC-coil -45...+60 °C AC-coil -45...+50 °C Mechanical life >20x106 operations Max. switching rate at rated- / minimum load 100 min-1 Operate- / release time 5 ms Bounce time 4 ms Vibration resistance N/O / N/C contact 2 g Shock resistance (function) N/O / N/C 10 g Protection category IP 50 Relay weight 80 g Packaging unit 25 pcs. Accessories see accessories MT, page 113
Socket system 78 740 and 745 8/11 pin socket for / MT3 Double A2 screw for simple further connection of coil supply Snap-on mounting on DIN-rail Screw mounting Pozidrive screws with rising clamp terminals Logical layout of input-/output connections With marking areaMT socket with screw-type terminals for MT3 MT socket with screw-type terminals for MT2
Technical Data Rated current 10 A Rated voltage 400 Vac Dielectric strength coil/cont. >3000 Veff Ambient temperature +80 °C Protection category IP 20 Protection against accidential contact meets VBG 4 Mounting/DIN rail DIN50022 Wire cross section x 2,5mm2 Packaging unit 10 Stk.
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2PA1576Q : 2PA1576; PNP General Purpose Transistor;; Package: SOT323 (UMT3, CMPAK).
APT10045JLL : 1000V, 21A Power MOS 7 Transistor. Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.
BF824/T1 : Transistor R.f Sot-23. Low current (max. 25 mA) Low voltage (max. 30 V). APPLICATIONS RF stages in FM front-ends in common base configuration. PNP medium frequency transistor a SOT23 plastic package. MARKING TYPE NUMBER BF824 Note p : Made in Hong Kong. t : Made in Malaysia. MARKING CODE(1) F8 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
CYL150 : . DIFFUSED SILICON JUNCTIONS PRV TO 200,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE INTERNAL CAPACITOR COMPENSATION Max. DC Reverse Current @ PRV and C, IR Max. DC Reverse Current @ PRV and C, IR Storage Temperature Range, TSTG Max.One-Half Cycle Surge Current, I FM (Surge 60Hz EDI reserves the right to change these s at any time whthout notice. x 1/4 DEEP.
HPN2907A : Emitter to Base Voltage:5V 600mA PNP Epitaxial Planar Transistor For General Purpose Amplifier And High Speed, Medium Power Switching Applications.
IRF7389 : 30V Dual N- And P- Channel HexFET Power MOSFET in a SO-8 Package. Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET.
JANSR2N7400 : 8a, 200v, 0.440 Ohm, Rad Hard, N-channel Power MOSFET. The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices.
MSAFX50N20A : N Channel MOSFET, Package : CoolPack1. Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request Drain-to-Source Breakdown Voltage (Gate Shorted to Source) SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100.
PHP2N60 : PHP2N60; Powermos Transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
PZTA64T1 : PNP Silicon Darlington Transistor Surface Mount. This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. High : 125 MHz Minimum The SOT-223 Package can be soldered using wave or reflow. SOT-223.
T1601N : SCR / Diode Presspacks. Volle Sperrfähigkeit bei 125° mit 50 Hz Hohe Stoßströme und niedriger Wärmewidererstände durch NTV-Verbindung zwischen Silizium und Mo-Trägerscheibe. Elektroaktive Passivierung durch a - C:H Full blocking capability at 125°C with 50 Hz High surge currents and low thermal resistance by using low temperature-connection NTV between silicon wafer and molybdenum.
UM4000Series : Pin Diode.
B0530WFRH : 0.5 A, 30 V, SILICON, SIGNAL DIODE. s: Package: ROHS COMPLIANT, PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; IF: 500 mA.
BAT54B : 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; Pin Count: 3 ; Number of Diodes: 2.
BUX10XR1 : 25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3. s: Polarity: NPN. HIGH CURRENT FAST SWITCHING HIGH RELIABILITY APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEX VCEO VEBO IC ICM IB Ptot Tstg, Tj Collector Base Voltage (IE = 0) Collector Emitter Voltage (VBE = 1.5V) Collector Emitter Voltage (IB = 0) Emitter Base Voltage (IC = 0) Collector Current Peak Collector Current.
OM6555SP1 : 10 A, 1000 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: 6 PIN ; Number of units in IC: 2.
P2512E2000BBT : RES,SMT,THIN FILM,200 OHMS,200WV,.1% +/-TOL,-25,25PPM TC,2612 CASE. s: Category / Application: General Use.
SRM3150HE : 1.5 A, SILICON, RECTIFIER DIODE. s: Package: HERMETIC SEALED, GLASS, 307, 2 PIN ; Number of Diodes: 1 ; IF: 1500 mA ; trr: 0.0700 ns.
TDZ030090 : CAPACITOR, CERAMIC, STUD MOUNT. s: Dielectric: Ceramic Composition ; Mounting Style: STUD MOUNT.
TK65E10N1 : POWER, FET. (2) (3) Low drain-source on-resistance: RDS(ON) 4.0 m (typ.) (VGS 10 V) Low leakage current: IDSS 10 µA (max) (VDS 100 V) Enhancement mode: Vth 4.0 V (VDS = 1.0 mA) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed).