Details, datasheet, quote on part number: 58SDM101
Part58SDM101
CategoryDiscrete => Diodes & Rectifiers
DescriptionLaser Diode
CompanyN.A.
DatasheetDownload 58SDM101 datasheet
  

 

Features, Applications

High quality, lightweight & robust design Visible & Infra-red models Variety of wavelength & output power options Line generating screw-on output converters

Now available in the UK and Ireland, Melles Griot Ltd introduces a new range of laser diode modules designed to offer reliability at an affordable price. The standard product is supplied with a moulded aspheric lens producing a high quality beam. Options include high working temperature models (to 60C) and flange mounted variants for ease of installation. Typical Applications include: Featuring:

Positioning Alignment Measurement Bar Code Reading Security Edge detection Target location Fibre optic testing

Reverse polarity protection Low voltage operation On board regulation Output power stabilisation Adjustable optics Wavelength/power options

We can fulfil your laser diode needs from development through to production.

MELLES GRIOT LTD 2 Pembroke Avenue Waterbeach, Cambridge, (01223) 203300 FAX (01223) 203320 E-mail: astephens@mellesgriot.com

635 nm Beam output Output power Power stability Wavelength (nm, @ 25C) Beam size (mm) Minimum spot size (m) Beam divergence (mrad) Pointing stability (mrad/C) Bore sighting Operating voltage (VDC) Operating current (mA) Operating temperature (C) Storage temperature (C) Material Flying lead length Finish Typical values quoted unless otherwise stated HE30 Aluminium 300 mm Anodised nm Elliptical 780 nm

Laser Diode Module Unit: mm Line Generating Output Converter Unit: mm
Features of line generator: Simple to mount & adjust Range of fan angles Compact & lightweight

Typical line Typical line thickness at 1m length at 1m Line generating output converter, 3 fan angle Line generating output converter, 12 fan angle Line generating output converter, 22 fan angle 400 mm Product number 58 DOC 003 58 DOC 012 58 DOC 022

645 nm laser diode module 670 nm laser diode module

VISIBLE AND/OR INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM GaAIAs Diode 150 mW max CLASS IIIb LASER PRODUCT

Diode laser assemblies may emit visible or invisible light which can cause severe damage to the human eye. DO NOT look directly into any laser beam or at any specular reflections from the laser.


 

Related products with the same datasheet
58SDM101F
58SDM103
58SDM103F
58SDM105
58SDM105F
58SDM112F
58SDM303
58SDM303F
58SDM363
58SDM363F
58SDM403
58SDM403F
Some Part number from the same manufacture
58SDM101F Laser Diode
59-020-040 Microscope Stereo
59-020-060
59-020-100 Microscope Long Reach
59-020-200 Microscope Stereo
592
59C11
59C11-2
59C11I/P
59C11T
59F135.03-01F Mid Woofer 5" 45w pa Speaker
59MS10.00-01F Marine Speaker 4" 15w
5IMX4-05-9 DC/DC Converter 5v 0.7a
5LS1-4CN152 Limit Switch Roller
6-054A-568 Insert
6-1393090-4 Relay 2pole 24vac
6-1393211-2 Relay Panel Dpno 240vac
6-1393215-7 Relay PCB 12vdc
6-1393238-2 Relay PCB Spco 12vdc
6-1419111-1 Relay Plug in 24vdc
6-1437007-5 Transition Connector Idc 34 Way
Same catergory

2N6111 : Silicon PNP Switching Transistors. APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications. Symbol V CBO V CEX V CEO V EBO IB P tot T stg Tj Parameter 2N6107 Collector-Base Voltage = 0) Collector-Emitter.

2SC4645 : NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Application.

2SK2851 : Power Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

BUZ22 : Sipmos(r) Power Transistor: 100v, 34a. Maximum Ratings Parameter Symbol Values Unit Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 IEC climatic category, DIN IEC 68-1 Electrical Characteristics,.

H7732-10 : PMT Modules.

XSD5501 : N-channel Depletion-mode 4-channel DmosFET Array. The SD5501 is manufactured utilizing Calogic's proprietary high speed, low capacitance DMOS process featuring an N-Channel depletion-mode design. This "normally-ON" device is well suited for high speed instrumentation and communication systems where multiple channels are required for fast switching or dual amplification. Available a 16-pin plastic dual.

05002-130AMMP : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000013 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.30E-5 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

BLD6G22LS-50 : 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 65 volts ; Package Type: ROHS COMPLIANT, CERAMIC PACKAGE-4 ; Number of units in IC: 2.

GBPC606/51-E4 : 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 175000 mA ; RoHS Compliant: RoHS ; Package: PLASTIC, CASE GBPC, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4.

MSP1B : RESISTOR, WIRE WOUND, 1 W, 0.5; 1; 2; 5 %, 25; 50; 100 ppm, 0.04 ohm - 2200 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Operating DC Voltage: 50 volts ; Operating Temperature: -55 to 275 C (-67 to 527 F).

NSP5153 : 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-257AA. s: Polarity: PNP ; Package Type: TO-257AA, 3 PIN.

OM5320DTT : 8 A, SILICON, RECTIFIER DIODE, TO-257AA. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 8000 mA ; Package: HERMETIC SEALED, TO-257AA, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

SM68009L : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.

T2-50-100KDI : RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 0.5 %, 50 ppm, 100000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 100000 ohms ; Tolerance: 0.5000 +/- % ; Temperature Coefficient: 50 ±ppm/°C ; Power Rating:.

 
0-C     D-L     M-R     S-Z