Details, datasheet, quote on part number: 59C11I/P
Part59C11I/P
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Description
CompanyN.A.
DatasheetDownload 59C11I/P datasheet
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Features, Applications
FEATURES

Low power CMOS technology Pin selectable memory organization x 16 bit organization Single 5V only operation Self timed WRITE, ERAL and WRAL cycles Automatic erase before WRITE RDY/BSY status information during WRITE Power on/off data protection circuitry 1,000,000 ERASE/WRITE cycles guaranteed Data Retention > 200 Years 8-pin DIP or SOIC package Temperature ranges supported - Commercial (C): +70C - Industrial (I): +85C - Automotive (E): to +125C

DESCRIPTION

The Microchip Technology Inc. a 1K bit Electrically Erasable PROM. The device is configured x 16, selectable externally by means of the control pin ORG. Advanced CMOS technology makes this device ideal for low power nonvolatile memory applications. The 59C11 is available in the standard 8-pin DIP and a surface mount SOIC package.

Microwire is a registered trademark of National Semiconductor Incorporated.

Function Chip Select Serial Clock Data In Data Out Ground Memory Array Organization Ready/Busy Status +5V Power SUpply

VCC...................................................................................7.0V All inputs and outputs w.r.t. VSS............... -0.6V to VCC +1.0V Storage temperature.................................. to +150C Ambient temperature with power applied...... to +125C Soldering temperature of leads (10 seconds)............. +300C ESD protection on all pins................................................4 kV

*Notice: Stresses above those listed under "Maximum ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

Commercial (C): Industrial (I): Automotive (E): Symbol Min Max Units Tamb to 125C Conditions

VCC detector threshold VTH 4.5 V High level input voltage VIH Vcc+1 V Low level input voltage VIL 0.8 V High level output voltage VOH 2.4 V Low level output voltage VOL 10 A Input leakage current ILI Output leakage current ILO 10 A Pin capacitance CIN, 7 pF (all inputs/outputs) COUT Operating current (all modes) ICC write 100 A Standby current ICCS Note 1: Internal resister pull-up at Pin 6. Active output at Pin 7. 2: This parameter is periodically sampled and not 100% tested.

IOH -400 A IOL 3.2 mA VIN 0V to VCC (Note 1) VOUT 0V to VCC (Note 1) VIN/VOUT = 0V (Note 2) Tamb = 1 MHz FCLK = 1 MHz, VCC = 0V, VCC = 5.5V

CLK TDIH TDIS DI VALID TDIH TDIS V IH VALID V IL TCSL CS TCSS TPD VALID V IL TPD DO TCZ VALID HIGH Z V IH/ OH V IL/ V IL

Parameter Clock frequency Clock high time Clock low time Chip select setup time Chip select hold time Chip select low time Data input setup time Data input hold time Data output delay time Data output disable time (from CS = low) Data output disable time (from last clock) RDY/BSY delay time Program cycle time (Auto Erase and Write) Symbol FCLK TCKH TCKL TCSS TCSH TCS TDIS TDIH TPD TCZ TDDZ TRBD Twc Min Max Units MHz ns ms cycles for 8-bit mode for ERAL and WRAL in 8/16-bit modes 25C, Vcc = 5.0V, Block Mode (Note 100 pF Conditions

Note 1: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total Endurance Model which can be obtained on our BBS or website.

Instruction READ WRITE EWEN EWDS ERAL WRAL

X 8 MODE, ORG = 0 Instruction READ WRITE EWEN EWDS ERAL WRAL Start Bit Opcode Address A1 A0 Data In D7-D0 Data Out D7-D0 High-Z Number of Req. CLK CYcles


 

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