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Part: 74HCT1G08GW/T1
Category:
Description: Ic-sm-cmos Logic
Company:
Datasheet: Download 74HCT1G08GW/T1 datasheet File size : 345 kB
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INTEGRATED CIRCUITS
DATA SHEET
74HC1G08; 74HCT1G08 2-input AND gate
Product specification File under Integrated Circuits, IC06 1998 Nov 10
Philips Semiconductors
Product specification
2-input AND gate
FEATURES · Wide operating voltage: 2.0 to 6.0 V · Symmetrical output impedance · High noise immunity · Low power dissipation · Balanced propagation delays · Very small 5 pins package · Output capability: standard. Notes DESCRIPTION The 74HC1G/HCT1G08 is a high-speed Si-gate CMOS device. The 74HC1G/HCT1G08 provides the 2-input AND function. The standard output currents are 1/2 compared to the 74HC/HCT08. FUNCTION TABLE See note 1. INPUTS inA L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. inB L H L H OUTPUT outY L L L H PINNING PIN 1 2 3 4 5 inB inA GND outY VCC SYMBOL QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf 6.0 ns.
74HC1G08; 74HCT1G08
TYP. SYMBOL tPHL/tPLH CI CPD PARAMETER propagation delay inA, inB to outY input capacitance power dissipation capacitance notes 1 and 2 CONDITIONS HC1G CL = 15 pF; VCC = 5 V 7 1.5 19 HCT1G 11 1.5 21 ns pF pF UNIT
1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; (CL × VCC2 × fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC - 1.5 V.
DESCRIPTION data input B data input A ground (0 V) data output DC supply voltage
1998 Nov 10
2
Philips Semiconductors
Product specification
2-input AND gate
ORDERING AND PACKAGE INFORMATION PACKAGES OUTSIDE NORTH AMERICA 74HC1G08GW 74HCT1G08GW TEMPERATURE RANGE -40 to +125 °C PINS 5 5 PACKAGE SC-88A SC-88A MATERIAL plastic plastic
74HC1G08; 74HCT1G08
CODE SOT353 SOT353
MARKING HE TE
handbook, halfpage
inB 1 inA 2 GND 3
MNA112
5 VCC
handbook, halfpage
1 2
inB inA
08
4 outY
outY
4
MNA113
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
1 2
handbook, halfpage
&
inB
4 outY
MNA114
inA
MNA115
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
1998 Nov 10
3
Philips Semiconductors
Product specification
2-input AND gate
RECOMMENDED OPERATING CONDITIONS 74HC1G04 SYMBOL VCC VI VO Tamb PARAMETER MIN. DC supply voltage input voltage output voltage operating ambient temperature input rise and fall times except for Schmitt trigger inputs 2.0 0 0 -40 TYP. 5.0 - - +25 MAX. 6.0 VCC VCC +125 MIN. 4.5 0 0 -40 TYP. 5.0 - - +25 MAX. 5.5 VCC VCC +125 V V V °C 74HCT1G04 UNIT
74HC1G08; 74HCT1G08
CONDITIONS
see DC and AC characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V
tr, tf
- - -
- - -
1 000 500 400
- - -
- - -
- 500 -
ns ns ns
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC ±IIK ±IOK ±IO ±ICC Tstg PD Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 55 °C the value of PD derates linearly with 2.5 mW/K. PARAMETER DC supply voltage DC input diode current DC output diode current DC output source or sink current standard outputs DC VCC or GND current for types with standard outputs storage temperature power dissipation per package VI VCC + 0.5 V; note 1 VO VCC + 0.5 V; note 1 -0.5 V < VO < VCC + 0.5 V; note 1 note 1 CONDITIONS - - - - -65 temperature range: -40 to +125 °C; note 2 - MIN. -0.5 MAX. +7.0 20 20 12.5 25 +150 200 UNIT V mA mA mA mA °C mW
1998 Nov 10
4
Philips Semiconductors
Product specification
2-input AND gate
DC CHARACTERISTICS
74HC1G08; 74HCT1G08
Family 74HC1G Additional type data to the recommended operating conditions; voltages are referenced to GND (ground = 0 V). Tamb (°C) SYMBOL PARAMETER MIN. VIH HIGH-level input voltage 1.5 3.15 4.2 VIL LOW-level input voltage - - - VOH HIGH-level output voltage; all outputs 1.9 4.4 5.9 VOH HIGH-level output voltage; standard outputs LOW-level output voltage; all outputs 4.13 5.63 - - - VOL LOW-level output voltage; standard outputs input leakage current quiescent supply current - - - - -40 to +85 TYP.(1) 1.2 2.4 3.2 0.8 2.1 2.8 2.0 4.5 6.0 4.32 5.81 0 0 0 0.15 0.16 - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.33 0.33 1.0 10 -40 to +125 MIN. 1.5 3.15 4.2 - - - 1.9 4.4 5.9 3.7 5.2 - - - - - - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.4 0.4 1.0 20 µA µA V V V V V V UNIT VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 6.0 6.0 VI = VIH or VIL; IO = 2.0 mA VI = VIH or VIL; IO = 2.6 mA VI = VCC or GND VI = VCC or GND; IO = 0 VI = VIH or VIL; -IO = 2.0 mA VI = VIH or VIL; -IO = 2.6 mA VI = VIH or VIL; IO = 20 µA VI = VIH or VIL: -IO = 20 µA OTHER TEST CONDITIONS
VOL
II ICC Note
1. All typical values are measured at Tamb = 25 °C.
1998 Nov 10
5
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