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Part: 74HCT1G125GW/T1
Category:
Description: Ic-sm-cmos Logic
Company:
Datasheet: Download 74HCT1G125GW/T1 datasheet File size : 345 kB
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INTEGRATED CIRCUITS
DATA SHEET
74HC1G125; 74HCT1G125 Bus buffer/line driver; 3-state
Product specification File under Integrated Circuits, IC06 1998 Nov 10
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
FEATURES · Wide operating voltage: 2.0 to 6.0 V · Symmetrical output impedance · High noise immunity · Low power dissipation · Balanced propagation delays · Very small 5 pins package · Output capability: bus driver. Notes DESCRIPTION The 74HC1G/HCT1G125 is a high-speed Si-gate CMOS device. The 74HC1G/HCT1G125 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A HIGH at OE causes the output as assume a high-impedance OFF-state. The bus driver output currents are equal compared to the 74HC/HCT125. FUNCTION TABLE See note 1. INPUTS OE L L H Note 1. H = HIGH voltage level; L = LOW voltage level; X = don't care; Z = high-impedance OFF state. inA L H X OUTPUT outY L H Z
74HC1G125; 74HCT1G125
QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf 6.0 ns. TYP. SYMBOL tPHL/tPLH CI CPD PARAMETER propagation delay inA to outY input capacitance power dissipation capacitance notes 1 and 2 CONDITIONS HC1G CL = 15 pF; VCC = 5 V 9 1.5 30 HCT1G 10 1.5 27 ns pF pF UNIT
1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; (CL × VCC2 × fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC - 1.5 V. PINNING PIN 1 2 3 4 5 OE inA GND outY VCC SYMBOL DESCRIPTION output enable input data input ground (0 V) data output DC supply voltage
1998 Nov 10
2
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
ORDERING INFORMATION
74HC1G125; 74HCT1G125
PACKAGES OUTSIDE NORTH AMERICA 74HC1G125GW 74HCT1G125GW TEMPERATURE RANGE -40 to +125 °C PINS 5 5 PACKAGE SC-88A SC-88A MATERIAL plastic plastic CODE SOT353 SOT353 MARKING HM TM
handbook, halfpage
handbook, halfpage
OE 1 inA 2 GND 3
MNA117
5 VCC
2
inA
outY
4
125
4 outY
1
OE
MNA118
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
2 4 1 OE
MNA119
handbook, halfpage
inA
outY
OE
MNA120
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
1998 Nov 10
3
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
RECOMMENDED OPERATING CONDITIONS 74HC1G04 SYMBOL VCC VI VO Tamb PARAMETER MIN. DC supply voltage input voltage output voltage operating ambient temperature input rise and fall times except for Schmitt trigger inputs 2.0 0 0 -40 TYP. 5.0 - - +25 MAX. 6.0 VCC VCC +125 MIN. 4.5 0 0 -40
74HC1G125; 74HCT1G125
74HCT1G04 UNIT TYP. 5.0 - - +25 MAX. 5.5 VCC VCC +125 V V V °C see DC and AC characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V CONDITIONS
tr, tf
- - -
- - -
1 000 500 400
- - -
- - -
- 500 -
ns ns ns
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC ±IIK ±IOK ±IO ±ICC Tstg PD Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 55 °C the value of PD derates linearly with 2.5 mW/K. PARAMETER DC supply voltage DC input diode current DC output diode current DC output source or sink current standard outputs DC VCC or GND current for types with standard outputs storage temperature power dissipation per package VI VCC + 0.5 V; note 1 VO VCC + 0.5 V; note 1 -0.5V < VO < VCC + 0.5 V; note 1 note 1 CONDITIONS - - - - -65 temperature range: -40 to +125 °C; note 2 - MIN. -0.5 MAX. +7.0 20 20 12.5 25 +150 200 UNIT V mA mA mA mA °C mW
1998 Nov 10
4
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
DC CHARACTERISTICS
74HC1G125; 74HCT1G125
Family 74HC1G Additional type data to the recommended operating conditions; voltages are referenced to GND (ground = 0 V). Tamb (°C) SYMBOL PARAMETER MIN. VIH HIGH-level input voltage 1.5 3.15 4.2 VIL LOW-level input voltage - - - VOH HIGH-level output voltage; all outputs 1.9 4.4 5.9 VOH HIGH-level output voltage; standard outputs LOW-level output voltage; all outputs 4.13 5.63 - - - VOL LOW-level output voltage; standard outputs input leakage current quiescent supply current - - - - -40 to +85 TYP.(1) 1.2 2.4 3.2 0.8 2.1 2.8 2.0 4.5 6.0 4.32 5.81 0 0 0 0.15 0.16 - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.33 0.33 1.0 10 -40 to +125 MIN. 1.5 3.15 4.2 - - - 1.9 4.4 5.9 3.7 5.2 - - - - - - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.4 0.4 1.0 20 µA µA V V V V V V UNIT VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 6.0 6.0 VI = VIH or VIL; IO = 2.0 mA VI = VIH or VIL; IO = 2.6 mA VI = VCC or GND VI = VCC or GND; IO = 0 VI = VIH or VIL; -IO = 2.0 mA VI = VIH or VIL; -IO = 2.6 mA VI = VIH or VIL; IO = 20 µA VI = VIH or VIL: -IO = 20 µA OTHER TEST CONDITIONS
VOL
II ICC Note
1. All typical values are measured at Tamb = 25 °C.
1998 Nov 10
5
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