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Part: 74HCT1G126GW/T1
Category:
Description: Ic-sm-cmos Logic
Company:
Datasheet: Download 74HCT1G126GW/T1 datasheet File size : 345 kB
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INTEGRATED CIRCUITS
74HC1G126 74HCT1G126 Bus buffer/line driver; 3-state
Product specification File under Integrated Circuits, IC06 1997 Nov 24
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
FEATURES · Wide operating voltage : 2.0 to 6.0 V · Symmetrical output impedance · High noise immunity · Low power dissipation · Balanced propagation delays · Very small 5 pins package · Output capability : bus driver CPD DESCRIPTION The 74HC1G/HCT1G126 is a highspeed Si-gate CMOS device. The 74HC1G/HCT1G126 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A LOW at OE causes the output as assume a high impedance OFF-state. The bus driver output currents are equal compared to the 74HC/HCT126. FUNCTION TABLE INPUTS OE H H L inA L H X OUTPUT outY L H Z Notes tPHL/ tPLH CI QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf 6.0 ns
74HC1G126 74HCT1G126
TYPICAL SYMBOL PARAMETER propagation delay inA to outY input capacitance power dissipation capacitance notes 1 and 2 30 27 pF CONDITIONS HC1G CL = 15 pF VCC = 5 V 9 HCT1G 10 ns UNIT
1.5
1.5
pF
1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; (CL × VCC2 × fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC - 1.5 V. PIN DESCRIPTION PIN NO. 1, 2 3 4 5 SYMBOL OE, inA GND outY VCC NAME AND FUNCTION output enable input, data input ground (0 V) data output positive supply voltage
H = HIGH voltage level L = LOW voltage level X = Don't care Z = High impedance OFF state
1997 Nov 24
2
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
ORDERING AND PACKAGE INFORMATION OUTSIDE NORTH AMERICA 74HC1G126GW 74HCT1G126GW PACKAGES NORTH AMERICA TEMPERATURE RANGE -40 °C to +125 °C PINS 5 5 PACKAGE MATERIAL SC88A SC88A plastic plastic
74HC1G126 74HCT1G126
CODE SOT353 SOT353
MARKING HN TN
OE 1 inA 2 GND 3
5 VCC
2
inA
outY
4
126
4 outY
1
OE
Fig.1
Pin configuration.
Fig.2
Logic symbol.
2 1 OE
inA
outY
4
OE
Fig.3
IEC logic symbol.
Fig.4
Logic diagram.
1997 Nov 24
3
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
RECOMMENDED OPERATING CONDITIONS 74HC1G SYMBOL VCC VI VO Tamb PARAMETER MIN. DC supply voltage input voltage output voltage operating ambient temperature range input rise and fall times except for Schmitt-trigger inputs 2.0 0 0 -40 - - - TYP. 5.0 - - 25 - - - MAX. 6.0 VCC VCC +125 1000 500 400 MIN. 4.5 0 0 -40 - - - TYP. 5.0 - - 25 - - - MAX. 5.5 VCC VCC +125 - 500 - ns V V V °C 74HCT1G UNIT
74HC1G126 74HCT1G126
CONDIITIONS
see DC and AC characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V
tr,tf
ABSOLUTE MAXIMUM RATINGS Limiting values is accordance with the Absolute Maximum Rating System (IEC 134). Voltages are referenced to GND (ground = 0 V) SYMBOL VCC ±IIK ±IOK ±IO ±ICC Tstg PD Notes 1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and functional operation of the device at these or any other conditions beyond those under `recommended operating conditions' is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. PARAMETER DC supply voltage DC input diode current DCoutput diode current DC output source or sink current bus driver outputs DC VCC or GND current for types with bus driver outputs storage temperature range power dissipation per package for temperature range: - 40 to + 125 °C 5 pins plastic SC88A above +55 °C derate linearly with 2.5 mW/K VI VCC + 0.5 V VO VCC + 0.5 V - 0.5V < VO < VCC + 0.5 V CONDITIONS MIN. -0.5 - - - - -65 - MAX. +7.0 20 20 35.0 70 +150 200 UNIT V mA mA mA mA °C mW
1997 Nov 24
4
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
DC CHARACTERISTICS FOR THE 74HC1G Over recommended operating conditions. Voltage are referenced to GND (ground = 0 V) Tamb (°C) SYMBOL PARAMETER MIN. 1.5 VIH HIGH level input voltage 3.15 4.2 - VIL LOW level input voltage - - 1.9 VOH HIGH level output voltage; all outputs HIGH level output voltage; Bus driver outputs LOW level output voltage; all outputs LOW level output voltage; Bus driver outputs input leakage current 3-state output OFF-state current Quiescent supply current 4.4 5.9 3.84 5.34 - - - - - - - - -40 to +85 TYP.(1) 1.2 2.4 3.2 0.8 2.1 2.8 2.0 4.5 6.0 4.32 5.81 0 0 0 0.15 0.16 - - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.33 0.33 1.0 5 10 -40 to +125 MIN. 1.5 3.15 4.2 - - - 1.9 4.4 5.9 3.7 5.2 - - - - - - - - MAX. - - - 0.5 1.35 1.8 - - - - V - 0.1 0.1 0.1 0.4 V 0.4 1.0 10 20 µA µA µA V V V V UNIT
74HC1G126 74HCT1G126
TEST CONDITIONS VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 6.0 6.0 6.0 VI = VIH or VIL, -IO = 20 µA VI = VIH or VIL, -IO = 6.0 mA VI = VIH or VIL, -IO = 7.8 mA VI = VIH or VIL, IO = 20 µA VI = VIH or VIL, IO = 6.0 mA VI = VIH or VIL, IO = 7.8 mA VI = VCC or GND VI = VIH or VIL, VO = VCC or GND VI = VCC or GND, IO = 0 OTHER
VOH
VOL
VOL
II IOZ ICC Note
1. All typical values are measured at Tamb = 25 °C.
1997 Nov 24
5
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