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Part: 74HCT1G14GW/T1
Category:
Description: Ic-sm-cmos Logic
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Datasheet: Download 74HCT1G14GW/T1 datasheet File size : 345 kB
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INTEGRATED CIRCUITS
DATA SHEET
74HC1G14; 74HCT1G14 Inverting Schmitt-trigger
Product specification File under Integrated Circuits, IC06 1998 Aug 05
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
FEATURES · Wide operating voltage range: 2.0 to 6.0 V · Symmetrical output impedance · High noise immunity · Low power dissipation · Balanced propagation delays · Very small 5 pins package · Applications Wave and pulse shapers Astable multivibrators Monostable multivibrators · Output capability: standard. DESCRIPTION The 74HC1G/HCT1G14 is a high-speed Si-gate CMOS device. The 74HC1G/HCT1G14 provides the inverting buffer function with Schmitt-trigger action. These devices are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. The standard output currents are 1/2 compared to the 74HC/HCT14. FUNCTION TABLE See note 1. INPUT inA L H Note 1. H = HIGH voltage level; L = LOW voltage level. OUTPUT outY H L Notes CPD
74HC1G14; 74HCT1G14
QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns. TYP. SYMBOL tPHL/tPLH CI PARAMETER CONDITIONS HC1G propagation CL = 15 pF delay inA to outY VCC = 5 V input capacitance power dissipation capacitance notes 1 and 2 10 1.5 20 HCT1G 15 1.5 22 ns pF pF UNIT
1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; (CL × VCC2 × fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC - 1.5 V. PINNING PIN 1 2 3 4 5 SYMBOL n.c. inA GND outY VCC DESCRIPTION not connected data input ground (0 V) data output DC supply voltage
1998 Aug 05
2
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
ORDERING AND PACKAGE INFORMATION PACKAGES OUTSIDE NORTH AMERICA 74HC1G14GW 74HCT1G14GW TEMPERATURE RANGE -40 to +125 °C PINS 5 5 PACKAGE SC-88A SC-88A
74HC1G14; 74HCT1G14
MATERIAL plastic plastic
CODE SOT353 SOT353
MARKING HF TF
handbook, halfpage
n.c 1 inA 2 GND 3
MNA022
5 VCC
handbook, halfpage
14
4 outY
2
inA
outY
4
MNA023
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
2
MNA024
4
handbook, halfpage
inA
outY
MNA025
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
1998 Aug 05
3
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
RECOMMENDED OPERATING CONDITIONS 74HC1G SYMBOL VCC VI VO Tamb PARAMETER MIN. DC supply voltage input voltage output voltage operating ambient temperature range 2.0 0 0 -40 TYP. 5.0 - - +25 MAX. 6.0 VCC VCC +125 MIN. 4.5 0 0 -40 TYP. 5.0 - - +25 74HCT1G
74HC1G14; 74HCT1G14
UNIT MAX. 5.5 VCC VCC +125 V V V °C
CONDITIONS
see DC and AC characteristics per device
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC ±IIK ±IOK ±IO ±ICC Tstg PD PARAMETER DC supply voltage DC input diode current DC output diode current DC output source or sink current standard outputs DC VCC or GND current for types with standard outputs storage temperature range power dissipation per package 5 pins plastic SC-88A Note 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. for temperature range: -40 to +125 °C above +55 °C derate linearly with 2.5 mW/K - 200 mW VI VCC + 0.5 V; note 1 VO VCC + 0.5 V; note 1 -0.5 V < VO < VCC + 0.5 V; note 1 note 1 CONDITIONS - - - - -65 MIN. -0.5 MAX. +7.0 20 20 12.5 25 +150 UNIT V mA mA mA mA °C
1998 Aug 05
4
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
DC CHARACTERISTICS FOR THE 74HC1G Over recommended operating conditions; voltages are referenced to GND (ground = 0 V). Tamb (°C) SYMBOL PARAMETER MIN. VOH HIGH-level output voltage; all outputs 1.9 4.4 5.9 VOH HIGH-level output voltage; standard outputs LOW-level output voltage; all outputs 4.13 5.63 - - - VOL LOW-level output voltage; standard outputs input leakage current quiescent supply current - - - - -40 to +85 TYP.(1) 2.0 4.5 6.0 4.32 5.81 0 0 0 0.15 0.16 - - MAX. - - - - - 0.1 0.1 0.1 0.33 0.33 1.0 10 -40 to +125 MIN. 1.9 4.4 5.9 3.7 5.2 - - - - - - - MAX. - - - - - 0.1 0.1 0.1 0.4 0.4 1.0 20 V V V V V V V V V V µA µA UNIT VCC (V) 2.0 4.5 6.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 6.0 6.0 VI = VIH or VIL; IO = 2.0 mA VI = VIH or VIL; IO = 2.6 mA VI = VCC or GND VI = VCC or GND; IO = 0 VI = VIH or VIL; -IO = 2.0 mA VI = VIH or VIL; -IO = 2.6 mA VI = VIH or VIL; IO = 20 µA OTHER VI = VIH or VIL; -IO = 20 µA TEST CONDITIONS
VOL
II ICC Note
1. All typical values are measured at Tamb = 25 °C. DC CHARACTERISTICS FOR THE 74HC1G14 Voltages are referenced to GND (ground = 0 V). Tamb (°C) SYMBOL PARAMETER MIN. VT+ positive-going threshold 0.7 1.7 2.1 VT- negative-going threshold 0.3 0.9 1.2 VH hysteresis (VT+ - VT-) 0.2 0.4 0.6 Note 1. All typical values are measured at Tamb = 25 °C. 1998 Aug 05 5 -40 to +85 TYP.(1) 1.09 2.36 3.12 0.60 1.53 2.08 0.48 0.83 1.04 MAX. 1.5 3.15 4.2 0.9 2.0 2.6 1.0 1.4 1.6 -40 to +125 MIN. 0.7 1.7 2.1 0.3 0.9 1.2 0.2 0.4 0.6 MAX. 1.5 3.15 4.2 0.9 2.0 2.6 1.0 1.4 1.6 V V V V V V V V V UNIT VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 see Figs 5 and 6 see Figs 5 and 6 WAVEFORMS see Figs 5 and 6 TEST CONDITIONS
Others parts begin by 74
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