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Part: 74VHCT125AT
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74VHCT125A
QUAD BUS BUFFERS (3-STATE)
PRELIMINARY DATA
s s
s
s
s
s
s
s
s s
HIGH SPEED: tPD = 3.8 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA = 25 oC COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS & OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 125 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.8V (Max.)
M (Micro Package)
T (TSSOP Package)
ORDER CODES : 74VHCT125AM 74VHCT125AT Schottky TTL combined with true CMOS low power dissipation. This device requires the 3-STATE control input G to be set high to place the output into the high impedance state. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against s tatic discharge, giving them 2KV ESD immunity and transient excess voltage.
DESCRIPTION The 74VHCT125A is an ad vanced high-speed CMOS QUAD BUS BUFFERS fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technolog y. I t has similar high speed performance of equivalent Bipolar
PIN CONNECTION AND IEC LOGIC SYMBOLS
September 1998
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74VHCT125A
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
P I N No 1, 4, 10, 13 2, 5, 9, 12 3, 6, 8, 11 7 14 S YMB O L 1G to 4G 1A to 4A 1Y to 4Y GND VCC NAM E AN D F UNC T I O N O ut put E nable In puts D at a Inp ut s D at a Out puts G ro und (0 V) P os itiv e S upply V olt age
TRUTH TABLE
A X L H
X: "H" or "L" Z: High Impadance
G H L L
Y Z L H
ABSOLUTE MAXIMUM RATINGS
S y mb o l VCC VI VO VO II K IOK IO Tstg TL Supply Vo lt age DC In put Volta ge DC Ou tpu t Vo lt age ( se e not e 1) DC Ou tpu t Vo lt age ( se e not e 2) DC In put Diode Curr ent DC Ou tpu t D iode C u rrent DC Ou tpu t C urrent Stor age T emperat ur e Lead T empe ratu re (10 se c) P arame t er V al u e -0.5 to + 7.0 -0.5 to + 7.0 -0.5 to + 7.0 -0.5 t o VCC + 0.5 - 20 ± 20 ± 25 ± 50 -65 to +150 300 Un i t V V V V mA mA mA mA
o o
ICC or IGND DC VCC or Gro und Current
C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. 1) Output in OFF State 2) High or Low State
RECOMMENDED OPERATING CONDITIONS
S y mb o l VCC VI VO VO Top dt/dv Supply Vo lt age Inp ut Volta ge Out put V oltage (se e n ote 1 ) Out put V oltage (se e n ote 2 ) Ope rat ing T empe ratu re Inp ut Rise a nd Fa ll T im e ( s ee not e 3) ( VCC = 5.0 ± 0.5 V) P arame t er Va lu e 4.5 to 5.5 0 to 5.5 0 to 5.5 0 to VCC -40 to +85 0 to 20 Un i t V V V V
o
C
ns/V
1) Output in OFF State 2) High or Low State 3)VIN from 0.8V to 2 V
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74VHCT125A
DC SPECIFICATIONS
S ym b o l P ar amet e r T est Co n d i t i o n s V CC ( V) VIH VIL VOH VOL High Level I nput Volt age Low L evel Input Volt age High Level O ut put Volt age Low L evel Outp ut Volt age 3 St a te O utp ut Leakage C u rrent Input Leakage C urrent Quies cent Supply Current Additi onal Wo rst C a se Supply Curr ent Out put Leakage Current 4.5 to 5.5 4.5 to 5.5 4.5 4.5 4.5 4.5 4.5 to 5.5 0 to 5.5 5.5 5.5 VI = VI H VI(*) = V I H or VIL
(*)
V al u e T A = 2 5 oC M in. 2 0.8 T yp . M ax. - 40 t o 85 o C Mi n. 2 0.8 4.4 3.8 0.0 0.1 0.36 ±0.25 ±0.1 2 1.35 0.1 0.44 ± 2.5 ± 1.0 20 1.5 M ax.
Unit
V V
IO=-50 µA IO=-8 mA IO=50 µA IO=8 mA
4.4 3.94
4.5
V
V µA µA µA mA
IOZ II ICC ICC
VI = VIH or VIL VO = 0V to 5.5V VI = 5.5V or GN D VI = VCC or GND One Input at 3.4V, other input at VCC or GND VOUT = 5.5V
IOPD
0
0.5
5.0
µA
(*) All outputs loaded
AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns)
S ym b o l P ar amet e r V CC ( V) tPLH tPHL tPLZ tPHZ tPZL tPZH Propagati on D e lay Tim e Out put D isable T im e Out put En able Ti m e 5.0 (*) 5.0 5.0 5.0(*) (*) 5.0
(*) (*)
T e st Co n d i t i o n
V al u e T A = 2 5 oC M i n . T yp . M ax. 3.8 5.3 3.6 5.1 6.1 5.5 7.5 5.1 7.1 8.8
Unit - 40 t o 85 o C M i n . M ax. 1.0 1.0 1.0 1.0 1.0 6.5 8.5 6.0 8.0 10.0 ns ns ns
C L = 15 pF C L = 50 pF C L = 1 5 pF ( ** ) C L = 5 0 pF ( ** ) C L = 5 0 pF ( ** )
(*) Voltage range is 5.0V ± 0.5V (**) RL = 1K
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74VHCT125A
CAPACITIVE CHARACTERISTICS
S ym b o l P ar am e te r T e st Co n d i t i o n s
o
Va lu e T A = 25 C Mi n. Typ. 4 10 14 M a x. 10 - 40 t o 85 C Min . M ax. 10
o
Unit
CIN C OUT C PD
Input Capacita nce Out put C apacit ance Power D is sipat ion Capacit ance (n ote 1)
pF pF pF
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD · VCC · fIN + ICC/4 (per circuit)
DYNAMIC SWITCHING CHARACTERISTICS
S ym b o l P ar amet e r T est Co n d i t i o n s V CC ( V) VOLP VOLV VIH D VILD Dynam ic Low V oltag e Quiet O utput ( note 1, 2) Dynam ic High Vo lt age Input (note 1 , 3) Dynam ic Low V oltag e Input (note 1 , 3) 5.0 -0.8 5.0 5.0 C L = 50 pF 2 0.8 M in. T yp . 0.3 -0.3 V V al u e T A = 2 5 oC M ax. 0.8 - 40 t o 85 o C Mi n. M ax. Unit
1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n -1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.
TEST CIRCUIT
T E ST t PLH, tPHL t PZL, tPL Z t PZH, tPHZ
CL = 15/50 pF or equivalent (includes jig and probe capacitance) RL = R1 = 1K or equivalent RT = ZOUT of pulse generator (typically 50)
SW I T C H Open VCC GND
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74VHCT125A
WAVEFORM 1: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f =1MHz; 50% duty cycle)
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