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Details, datasheet, quote on part number:74VHCT86AT
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Datasheet text preview:
74VHCT86A
QUAD EXCLUSIVE OR GATE
PRELIMINARY DATA
s s
s
s
s
s
s
s
s s
HIGH SPEED: tPD = 5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS & OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 86 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.8V (Max.)
M (Micro Package)
T (TSSOP Package)
ORDER CODES : 74VHCT86AM 74VHCT86AT metal wiring C2MOS technolo gy. It has similar high speed performance o f equivalent Bipolar Schottky TTL combined with true CMOS low power dissipation. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against s tatic discharge, giving them 2KV ESD immunity and transient excess voltage.
DESCRIPTION The 74VHCT86A is an advanced high-speed CMOS QUAD EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer
PIN CONNECTION AND IEC LOGIC SYMBOLS
April 1998
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74VHCT86A
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
P I N No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 S YMB O L 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAM E AN D F UNC T I O N D at a Inp ut s D at a Inp ut s D at a Out puts G ro und (0 V) P os itiv e S upply V olt age
TRUTH TABLE
A L L H H B L H L H Y L H H L
ABSOLUTE MAXIMUM RATINGS
S y mb o l VCC VI VO VO II K IOK IO Tstg TL Supply Vo lt age DC In put Volta ge DC Ou tpu t Vo lt age ( se e not e 1) DC Ou tpu t Vo lt age ( se e not e 2) DC In put Diode Curr ent DC Ou tpu t D iode C u rrent DC Ou tpu t C urrent Stor age T emperat ur e Lead T empe ratu re (10 se c) P arame t er V al u e -0.5 to + 7.0 -0.5 to + 7.0 -0.5 to + 7.0 -0.5 t o VCC + 0.5 - 20 ± 20 ± 25 ± 50 -65 to +150 300 Un i t V V V V mA mA mA mA
o o
ICC or IGND DC VCC or Gro und Current
C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. 1) VCC = 0V 2) High or Low State
RECOMMENDED OPERATING CONDITIONS
S y mb o l VCC VI VO VO Top dt/dv Supply Vo lt age Inp ut Volta ge Out put V oltage (se e n ote 1 ) Out put V oltage (se e n ote 2 ) Ope rat ing T empe ratu re Inp ut Rise a nd Fa ll T im e ( s ee not e 3) ( VCC = 5.0 ± 0.5 V) P arame t er Va lu e 4.5 to 5.5 0 to 5.5 0 to 5.5 0 to VCC -40 to +85 0 to 20 Un i t V V V V
o
C
ns/V
1) VCC = 0V 2) High or Low State 3)VIN from 0.8V to 2 V
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74VHCT86A
DC SPECIFICATIONS
S ym b o l P ar amet e r T est Co n d i t i o n s V CC ( V) VIH VIL VOH High Level I nput Volt age Low L evel Input Volt age High Level O ut put Volt age Low L evel Outp ut Volt age Input Leakage C urrent Quies cent Supply Current Additi onal Wo rst C a se Supply Curr ent Out put Leakage Current 4.5 to 5.5 4.5 to 5.5 4.5 4.5 4.5 4.5 0 to 5.5 5.5 5.5 VI = V I H or VIL VI(*) = V I H or VIL
(*)
V al u e T A = 2 5 oC M in. 2 0.8 T yp . M ax. - 40 t o 85 o C Mi n. 2 0.8 4.4 3.8 0.0 0.1 0.36 ±0.1 2 1.35 0.1 0.44 ± 1.0 20 1.5 M ax.
Unit
V V
IO=-50 µA IO=-8 mA IO=50 µA IO=8 mA
4.4 3.94
4.5
V
VOL
V µA µA mA
II ICC ICC
VI = 5.5V or GN D VI = VCC or GND One Input at 3.4V, other input at VCC or GND VOUT = 5.5V
IOPD
0
0.5
5.0
µA
(*) All outputs loaded
AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns)
S ym b o l P ar amet e r T e st Co n d i t i o n V CC ( *) ( V) 5.0 5.0 C L = 15 pF C L = 50 pF V al u e o TA = 25 C M i n . T yp . M ax. 5.0 7.9 5.5 7.9 Unit - 40 t o 85 C M i n . M ax. 1.0 9.0 1.0 9.0
o
tPLH tPHL
Propagati on D e lay Tim e
ns
(*) Voltage range is 5V ± 0.5V
CAPACITIVE CHARACTERISTICS
S ym b o l P ar amet e r T est Co n d i t i o n s
o
V al u e TA = 25 C M i n . T yp . M ax. - 40 t o 85 C M i n . M ax. 10
o
Unit
CIN C PD
Input Capacita nce Power D is sipat ion Capacit ance (n ote 1)
4 18
10
pF pF
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD · VCC · fIN + ICC/4 (per Gate)
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74VHCT86A
DYNAMIC SWITCHING CHARACTERISTICS
S ym b o l P ar amet e r T est Co n d i t i o n s V CC ( V) VOLP VOLV VIH D VILD Dynam ic Low V oltag e Quiet O utput ( note 1, 2) Dynam ic High Vo lt age Input (note 1 , 3) Dynam ic Low V oltag e Input (note 1 , 3) 5.0 -0.8 5.0 5.0 C L = 50 pF 2 0.8 M in. T yp . 0.3 -0.3 V V al u e T A = 2 5 oC M ax. 0.8 - 40 t o 85 o C Mi n. M ax. Unit
1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n -1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.
TEST CIRCUIT
CL = 15/50 pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50)
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74VHCT86A
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
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