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Details, datasheet, quote on part number:900MHAP2
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Datasheet text preview:
Philips Semiconductors B.V.
Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Re p o rt nr. A u th o r Date De p artme n t
: RNR-T45-97-B-0688 : T. Buss : 26 Aug 1997 : P.G. Transistors & Diodes, Development
9 0 0 M H z DRIVER-AMPLIFIER W I T H ENABLE-SWITCH U S I N G THE BFG425W
Abs trac t: This application note contains an example of a Driver-Amplifier using the new BFG425W Double Poly RFtransistor. The driver can be switched on and off with a control-voltage VCON=0...3V. The driver is designed for a frequency f=900MHz. Performance at f=900MHz, T=250C: Power Gain >12dB.
Appe ndix I: Schematic of the circuit Appe ndix II: Results of measurements Appe ndix III: Printlayout and list of used components & materials
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Philips Semiconductors B.V.
Introduc tion: With the new Philips silicon bipolar double poly BFG400W series, it is possible to design driver-amplifiers for high frequency applications with a low current and a low supply voltage. These amplifiers are well suited for the new generation low voltage high frequency wireless applications. In this note an example of such an amplifier for 900MHz will be given. This driver can be switched on and off with a control-voltage VCON.
De s igning the circuit: Th e circuit is designed to show the following performance (target): tran sisto r: BFG425W V SUP=3 V , VCO N=0 V (driver disabled), ISUP~0 mA V SUP=3 V , VCO N=3 .0 V (driver enabled), ISUP~1 1 mA fre q =90 0 MHz P o we r Gain: >12dB V S WRi<1 :2 .5 V S WRo <1 :2 Th e in- and outputmatching-circuits are realised with a RC-combination. No coils are used to reduce the price. Th e Enable is controlled at the base in order to reduce the control-current (V CO N=3 V : ICO N~0 .6 mA). DCd e co u plin g in the emitter is used reduce the influence of HFE-spread. De s igning the layout: A lay-out has been designed with HP-MDS. Appendix III contains the printlayout. M e a s ure me nts : Me asu re me n ts of the total circuit (epoxy PCB) are done (Appendix II).
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Philips Semiconductors B.V.
Appe ndix I: Schematic of the circuit
C4 +VCON C5 R2 C6
C3
+VSUP
OUT 50 R1 IN 50 C1 BFG425W C2
R3 R4 C7
Figure 1: Driver circuit 9 0 0 MHz Driver Component list: Co mp o ne n t: V alu e : R1 R2 R3 R4 C1 C2 C3 C4 C5 C6 C7 2 .7 k 100 3 .9 k 56 1 5 0 pF 1 5 0 pF 2 7 pF 1 nF 2 7 pF 1 nF 2 7 pF
Co mme nt: B ias, RF-block RF-b lock B ias. DC-d e co u p lin g In p u t match. Ou tp u t match. 9 0 0 MHz short. RF Decoupling 9 0 0 MHz short. RF Decoupling 9 0 0 MHz short.
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Philips Semiconductors B.V.
Appe ndix II: Results measurements: B FG4 2 5W, V SUP=3 .0 V , ISUP~1 1 .0 mA @T=2 5 oC ,V CO N=3 .0 V , ICO N~0 .6 mA@T=2 5 oC M e a s ure me nts PCB: Comme nt: f=9 0 0 MHz |S 21|2 [dB] 1 5 .5 P I N=-3 0 d Bm, T=25 oC GP [dB] 13 P I N=-1 0 d Bm, T=25 oC GP [dB] ~1 1 P I N=-1 0 d Bm, T -40 o C (Freeze spray) V S WRi V S WRo No ise Figure [dB] IP 3 [dBm] (output) 2 .5 1 .7 ~2 . 5 P I N=-3 0 d Bm, T=25 oC P I N=-3 0 d Bm, T=25 oC P I N=-3 0 d Bm, T=25 oC n o t measured
Isup and S21 as function o
16
14
12
S21
10
8
Isup
6
4
2
0 0 0.5 1 1.5 Vcon [V 2 2.5 3 3.5
Figure 2: ISUP and S21 as funcion of VCON. (VSUP=3.0V, f=900MHz)
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Philips Semiconductors B.V.
Appe ndix III: Printlayout and list of used components & materials
RFin R3
C1
µS4 C7 C2 P5 RFout
C5, C6
R1 R4 SHORT
Vcon
R2
Vsup
C3
µS4 C4
900MHz Driver Amplifier with enable-switch BFG425W
Fig u re 3: Printlayout 9 0 0 MHz Driver Component list: Co mp o ne n t: R1 R2 R3 R4 C1 C2 C3 C4 C5 C6 C7 P5 P CB V alu e : 2 .7 k 100 3 .9 k 56 1 5 0 pF 1 5 0 pF 2 7 pF 1 nF 2 7 pF 1 nF 2 7 pF B FG4 2 5W r ~4.6, H=0.5mm size : 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips S OT3 4 3R Philips FR4
note 1: The used PCB was designed for Low Noise Amplifier applications. Shorts and wires are used to adapt th e PCB for this driver application.
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