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Part: 900MHZDR
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Philips Semiconductors B.V.
Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Re p o rt nr. A u th o r Date De p artme n t
: RNR-T45-97-B-0686 : T. Buss : 22 Aug1997 : P.G. Transistors & Diodes, Development
9 0 0 M H z DRIVER-AMPLIFIER W I T H THE BFG425W
Abs trac t: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=900MHz. Performance at f=900MHz, T=250C: Power Gain >12dB, Noise Figure NF<2dB.
Appe ndix I: Schematic of the circuit Appe ndix II: Results of simulations and measurements Appe ndix III: Printlayout and list of used components & materials
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Philips Semiconductors B.V.
Introduc tion: With the new Philips silicon bipolar double poly BFG400W series, it is possible to design driver-amplifiers for high frequency applications with a low current and a low supply voltage. These amplifiers are well suited for the new generation low voltage high frequency wireless applications. In this note an example of such an amplifier will be given. This driver-amplifier is designed for a working frequency of 900MHz.
De s igning the circuit: Th e circuit is designed to show the following performance (target): tran sisto r: BFG425W V SUP=3 V , ISUP~1 0 mA fre q =90 0 MHz P o we r Gain: >12dB V S WRi<1 :2 V S WRo <1 :2 Th e in- and outputmatching is realised with a RC-combination. Also extra emitter-inductance on both emitterle ad s (µ-strips) are used to improve the matching. This emitter inductance is not necessary. The place of the via-h ole s is not critical. De s igning the layout: A lay-out has been designed with HP-MDS. Appendix III contains the printlayout. M e a s ure me nts : Me asu re me n ts of the total circuit (epoxy PCB) are done (Appendix II).
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Philips Semiconductors B.V.
Appe ndix I: Schematic of the circuit
C3 C4 +VSUP
R2 OUT 50 R1 IN 50 C1 W1 BFG425W µS4: µS4 µS4 D1 L1 L2 L3 W2 Figure 1: Driver circuit 9 0 0 MHz Driver Component list: Co mp o ne n t: V alu e : R1 R2 C1 C2 C3 C4 µs4 3 .3 k 150 1 5 0 pF 1 5 0 pF 2 7 pF 1 nF (n e xt table) C2
Co mme nt: B ias. In p u t match. Ou tp u t match. 9 0 0 MHz short. RF Decoupling E mitter induction: µ-stripline + via
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Philips Semiconductors B.V.
µS 4 Emitter induction (µ-stripline + via): Name Dime n sio De scrip tio n n L1 1 .0 mm le n g th µ-stripline; Z0~4 8 (PCB: r ~4.6, H=0.5mm) L2 1 .0 mm le n g th interconnect stripline and via-hole area L3 1 .0 mm le n g th via-hole area W1 0 .5 mm wid th µ-stripline W2 1 .0 mm wid th via-hole area D1 0 .4 mm d iame te r of via-hole
Appe ndix II: Results of simulations and measurements: B FG4 2 5W, V SUP=3 .0 V , ISUP~1 0 .0 mA @T=2 5 oC M e a s ure me nts PCB: f=9 0 0 MHz |S 21|2 [dB] 17 GP [dB] 14 GP [dB] ~1 0 V S WRi V S WRo No ise Figure [dB] IP 3 [dBm] (output) 1 .8 1 .5 <2 . 0 -
Comme nt: P I N=-3 0 d Bm, T=25 oC P I N=-1 0 d Bm, T=25 oC P I N=-1 0 d Bm, T<<0 oC (Freeze spray) P I N=-3 0 d Bm, T=25 oC P I N=-3 0 d Bm, T=25 oC P I N=-3 0 d Bm, T=25 oC n o t measured
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Philips Semiconductors B.V.
Appe ndix III: Printlayout and list of used components & materials
RFin
C1
µS4 C2 P5 RFout
R1 SHORT
R2 Vsup µS4 C4
C3
900MHz Driver Amplifier BFG425W
Fig u re 2: Printlayout 9 0 0 MHz Driver Component list: Co mp o ne n t: R1 R2 C1 C2 C3 C4 P5 P CB V alu e : 3 .3 k 150 1 5 0 pF 1 5 0 pF 2 7 pF 1 nF B FG4 2 5W r ~4.6, H=0.5mm size : 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips S OT3 4 3R Philips FR4
note 1: The used PCB was designed for Low Noise Amplifier applications. Shorts and wires are used to adapt th e PCB for this driver application.
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Others parts begin by 90
90-1
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