|Description||Ic-1mb 5v Flash Memory|
|Datasheet||Download AM29F010-120PC datasheet
1 Megabit x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
± 10% for read and write operations Minimizes system level power requirements s Compatible with JEDEC-standards Pinout and software compatible with single-power-supply Flash Superior inadvertent write protection s 32-pin PLCC 32-pin TSOP 32-pin PDIP s Minimum 100,000 write/erase cycles guaranteed s High performance 45 ns maximum access time s Sector erase architecture Uniform sectors of 16 Kbytes each Any combination of sectors can be erased. Also supports full chip erase s Sector protection Hardware method that disables any combination of sector(s) from write or erase operations s Embedded EraseTM Algorithms Automatically preprograms and erases the chip or any sector s Embedded ProgramTM Algorithms Automatically programs and verifies data at specified address s Data Polling and Toggle Bit feature for detection of program or erase cycle completion s Low power consumption 30 mA maximum active read current 50 mA maximum program/erase current s Enhanced power management for standby mode <25 µA typical standby current
The a 1 Mbit, 5.0 Volt-only Flash memory organized as 128 Kbytes of 8 bits each. The 1 Mbit of data is divided into 8 sectors of 16 Kbytes for flexible erase capability. The 8 bits of data will appear DQ0 DQ7. The Am29F010 is offered in 32-pin packages which allows for upgrades to 4 Mbit densities in the same pin out. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard Am29F010 offers access times between 45 ns and 120 ns allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The Am29F010 is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 Volt Flash or EPROM devices. The Am29F010 is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. This device also features a sector erase architecture. This allows for sectors of memory to be erased and reprogrammed without affecting the data contents of
other sectors. A sector is typically erased and verified within one second. The Am29F010 is erased when shipped from the factory. The Am29F010 device also features hardware sector protection. This feature will disable both program and erase operations in any combination of eight sectors of memory. The device features single 5.0 Volt power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transitions. The end of program or erase is detected by the Data Polling or by the Toggle Bit (DQ6). Once the end of a program or erase cycle has been completed, the device automatically resets to the read mode. 's ye Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The Am29F010 memory electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a timeusing the EPROM programming mechanism of hot electron injection.
s Eight 16 Kbyte sectors s Individual-sector or multiple-sector erase capability s Sector protection is user definable16 Kbyte 16 Kbyte 16 Kbyte 16 Kbyte 16 Kbyte 16 Kbyte 16 Kbyte 16 Kbyte
State Control Command Register PGM Voltage Switch Chip Enable Output Enable Logic Data Latch
Embedded Algorithms VCC Detector Timer Address Latch
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