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Part: BAS16W/T1
Category:
Discrete
-> Diodes & Rectifiers
Description: Diode Sot-323
Company:
Datasheet: Download BAS16W/T1 datasheet File size : 46 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS16 High-speed diode
Product specification Supersedes data of 1996 Sep 10 1999 May 26
Philips Semiconductors
Product specification
High-speed diode
FEATURES · Small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 85 V · Repetitive peak forward current: max. 500 mA. APPLICATIONS · High-speed switching in hybrid thick and thin-film circuits.
3
handbook, halfpage 2
BAS16
DESCRIPTION The BAS16 is a high-speed switching diode fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode
1 2 n.c. 3
MAM185
1
Marking code: A6p = made in Hong Kong; A6t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - -65 - 4 1 0.5 250 +150 150 A A A mW °C °C see Fig.2; note 1 CONDITIONS - - - - MIN. MAX. 85 75 215 500 V V mA mA UNIT
1999 May 26
2
Philips Semiconductors
Product specification
High-speed diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 25 V VR = 75 V VR = 25 V; Tj = 150 °C VR = 75 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 30 1 30 50 1.5 4 715 855 1 1.25 CONDITIONS MAX.
BAS16
UNIT mV mV V V nA µA µA µA pF ns
Vfr
forward recovery voltage
1.75
V
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 330 500 UNIT K/W K/W
1999 May 26
3
Philips Semiconductors
Product specification
High-speed diode
GRAPHICAL DATA
BAS16
MSA562 -1
250 IF (mA) 200
handbook, halfpage
300
MBG382
IF (mA)
(1) (2) (3)
200
150
100
100
50
0 0 50 100 150 200 Tamb (oC)
0
0
1
VF (V)
2
(1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. Device mounted on an FR4 printed-circuit board. (3) Tj = 25 °C; maximum values.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 Based on square wave currents. Tj = 25 °C prior to surge. 10
102
103
tp (µs)
104
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 26
4
Philips Semiconductors
Product specification
High-speed diode
BAS16
105 IR (nA) 10
4
MGA884
handbook, halfpage
0.8
MBG446
Cd (pF) V R = 75 V 0.6
103
max
75 V
0.4
10
2
25 V 0.2 typ typ
10
0 100 T j ( o C) 200 0 4 8 12 VR (V) 16
0
f = 1 MHz; Tj = 25 °C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
1999 May 26
5
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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