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Part: BAS32L/T1
Category:
Discrete
-> Diodes & Rectifiers
Description: Diode Switching
Company:
Datasheet: Download BAS32L/T1 datasheet File size : 256 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
1/3 page (Datasheet)
M3D054
BAS32L High-speed diode
Product specification Supersedes data of April 1996 1996 Sep 10
Philips Semiconductors
Product specification
High-speed diode
FEATURES · Small hermetically sealed glass SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 75 V · Repetitive peak forward current: max. 450 mA. APPLICATIONS · High-speed switching · Fast logic applications.
Cathode indicated by black band.
handbook, 4 columns
BAS32L
DESCRIPTION The BAS32L is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD package.
k
a
MAM061
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - -65 - 4 1 0.5 500 +200 200 A A A mW °C °C see Fig.2; note 1 CONDITIONS MIN. - - - - MAX. 75 75 200 450 V V mA mA UNIT
1996 Sep 10
2
Philips Semiconductors
Product specification
High-speed diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 5 mA IF = 100 mA IF = 100 mA; Tj = 100 °C IR reverse current see Fig.5 VR = 20 V VR = 75 V VR = 20 V; Tj = 150 °C VR = 75 V; Tj = 150 °C V(BR)R Cd trr reverse breakdown voltage diode capacitance reverse recovery time IR = 100 µA f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 50 mA; tr = 20 ns; see Fig.8 - - - - - 100 620 - - CONDITIONS MIN.
BAS32L
MAX. 750 1 000 930 25 5 50 100 - 2 4
UNIT mV mV mV nA µA µA µA V pF ns
Vfr
forward recovery voltage
2.5
V
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 300 350 UNIT K/W K/W
1996 Sep 10
3
Philips Semiconductors
Product specification
High-speed diode
GRAPHICAL DATA
BAS32L
handbook, halfpage
300
MBG451
handbook, halfpage
600
MBG464
IF (mA) 200
IF (mA) 400
(1) (2) (3)
100
200
0 0 100 Tamb (oC) 200
0 0 (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. 1 VF (V) 2
Device mounted on an FR4 printed-circuit board.
(3) Tj = 25 °C; maximum values.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 Based on square wave currents. Tj = 25 °C prior to surge. 10
102
103
tp (µs)
104
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 10
4
Philips Semiconductors
Product specification
High-speed diode
BAS32L
103 handbook, halfpage IR (µA)
MGD006
MGD004
handbook, halfpage
1.2
10
2
Cd (pF) 1.0
(1) (2) (3)
10 0.8 1
10-1
0.6
10-2 0 100 Tj (oC) 200
0.4 0 10 VR (V) 20
(1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. f = 1 MHz; Tj = 25 °C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
1996 Sep 10
5
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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