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Part: BAT54AW/T1
Category:
Discrete
-> Diodes & Rectifiers
Description: Diode Schottky Dual
Company:
Datasheet: Download BAT54AW/T1 datasheet File size : 40 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BAT54 series Schottky barrier (double) diodes
Product specification Supersedes data of 2001 Oct 12 2002 Mar 04
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
FEATURES · Low forward voltage · Guard ring protected · Small plastic SMD package. APPLICATIONS · Ultra high-speed switching · Voltage clamping · Protection circuits · Blocking diodes. DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available.
Top view
handbook, 2 columns
BAT54 series
PINNING DESCRIPTION PIN BAT54 1 2 3 a n.c. k BAT54A k1 k2 a1, a2 BAT54C a1 a2 k1, k2 BAT54S a1 k2 k1, a2
3
1
2
MGC421
MARKING TYPE NUMBER BAT54 BAT54A BAT54C BAT54S Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. = W: Made in China. MARKING CODE(1)
Fig.1 L4 L42 or V3 L43 or W1 L44 or V4
1
Simplified outline (SOT23) and pin configuration.
3 2 n.c.
MLC357
3 1 2
MLC360
(1) BAT54
(2) BAT54A
3 1 2
MLC359
3 1 2
MLC358
(3) BAT54C
(4) BAT54S
Fig.2 Diode configuration and symbol.
2002 Mar 04
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Per device Ptot total power dissipation Tamb 25 °C - continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature tp 1 s; 0.5 tp < 10 ms - - - - PARAMETER CONDITIONS
BAT54 series
MIN.
MAX.
UNIT
30 200 300 600 +150 125
V mA mA mA °C °C mW
-65 -
230
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT23 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR trr reverse current reverse recovery time VR = 25 V; see Fig.4 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.6 f = 1 MHz; VR = 1 V; see Fig.5 240 320 400 500 800 2 5 mV mV mV mV mV µA ns PARAMETER CONDITIONS MAX. UNIT PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 UNIT K/W
Cd
diode capacitance
10
pF
2002 Mar 04
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54 series
MSA892
3 handboo1,0 k halfpage
10 3 IR (µA) 10 2
(2) (1)
MSA893
IF (mA) 10
2
(1) (2) (3)
10
10
1
(1)
(2)
(3)
1
(3)
10 1
0
0.4
0.8
VF (V)
1.2
10 1 0 10 20 VR (V) 30
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
Fig.3
Forward current as a function of forward voltage; typical values.
Fig.4
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage
15
MSA891
Cd (pF)
handbook, halfpage I
F
dI F
10
dt
10 % t
5
Qr 90 % IR tf
MRC129 - 1
0
0
10
20
VR (V)
30
f = 1 MHz; Tamb = 25 °C.
Fig.5
Diode capacitance as a function of reverse voltage; typical values.
Fig.6 Reverse recovery definitions.
2002 Mar 04
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BAT54 series
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2002 Mar 04
5
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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