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Part: BAV20/A52R
Category:
Discrete
-> Diodes & Rectifiers
Description: Diode
Company:
Datasheet: Download BAV20/A52R datasheet File size : 67 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAV20; BAV21 General purpose diodes
Product specification Supersedes data of 1996 Sep 17 1999 May 25
Philips Semiconductors
Product specification
General purpose diodes
FEATURES · Hermetically sealed leaded glass SOD27 (DO-35) package · Switching speed: max. 50 ns · General application · Continuous reverse voltage: max. 150 V, 200 V · Repetitive peak reverse voltage: max. 200 V, 250 V · Repetitive peak forward current: max. 625 mA. APPLICATIONS · General purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.
The diodes are type branded.
BAV20; BAV21
DESCRIPTION The BAV20 and BAV21 are switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
handbook, halfpage k
a
MAM246
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
1999 May 25
2
Philips Semiconductors
Product specification
General purpose diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BAV20 BAV21 VR continuous peak reverse voltage BAV20 BAV21 IF IFRM IFSM continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - -65 - see Fig.2; note 1 - - - - PARAMETER repetitive peak reverse voltage - - CONDITIONS
BAV20; BAV21
MIN.
MAX. 200 250 150 200 250 625 V V V V
UNIT
mA mA
9 3 1 400 +175 175
A A A mW °C °C
1999 May 25
3
Philips Semiconductors
Product specification
General purpose diodes
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 100 mA IF = 200 mA IR reverse current see Fig.5 VR = VRmax VR = VRmax; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA; see Fig.8 - - - - - - CONDITIONS
BAV20; BAV21
MIN.
MAX. 1.0 1.25 100 100 5 50 V V
UNIT
nA µA pF ns
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 375 UNIT K/W K/W
1999 May 25
4
Philips Semiconductors
Product specification
General purpose diodes
GRAPHICAL DATA
BAV20; BAV21
handbook, halfpage
300
MBG449
handbook, halfpage
600
MBG459
IF (mA) 200
IF (mA) 400
(1) (2) (3)
100
200
0 0 100 Tamb (oC) 200
0 0 (1) Tj = 150 °C; typical values. 1 VF (V) 2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
(2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG703
10
1
10-1 1 10
102
103
tp (µs)
104
Based on square wave currents. Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 25
5
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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