Details, datasheet, quote on part number: BAV70SQ62702A1097
CategoryDiscrete => Diodes & Rectifiers
DescriptionDiode Quad Sot363
DatasheetDownload BAV70SQ62702A1097 datasheet
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Features, Applications

For high speed switching applications Common cathode Internal (galvanic) isolated Diodes Arrays in one package

Maximum Ratings per Diode Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, 1 s Total Power dissipation Symbol Values mW C Unit V

Junction temperature Storage temperature Thermal Resistance Junction ambient

Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics per Diode Breakdown voltage Values typ. max. Unit

Forward current = f (TA*;TS) * Package mounted on epoxy


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Same catergory

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2N6515 : ic (mA) = 500 ;; VCBO(V) = 250 ;; VCEO(V) = 250.

ASAT25 : . The ASI ASAT25 is Designed for General Purpose Class Operations to 1.7 GHz. Internal Input/Output Matching Network 25 W/1.7 GHz OmnigoldTM Metalization System IC VCBO VCEO VEBO PDISS TJ TSTG C 3.5 C/W .

BAR50-02V : Pin Diodes For Switching And Attenuation Applications. Frequency range above 10 MHz to 6 GHz Especially useful as antenna switch Very low capacitance at zero volt reverse bias Maximum Ratings = 25C, unless otherwise specified Parameter Symbol VR IF Ptot Value Unit Diode reverse voltage Forward current Total power dissipation TS 60C Junction temperature Operating temperature range Storage temperature Thermal.

HSMS-8101 : X-band Mixer Diode. Surface Mount Microwave Schottky Mixer Diodes Technical Data HSMS-8101 Single HSMS-8202 Series Pair HSMS-8207 Ring Quad HSMS-8209 Crossover Quad Optimized for use at 10-14 GHz Low Capacitance Low Conversion Loss Low RD Low Cost Surface Mount Plastic Package Package Lead Code Identification (Top View) These low cost microwave Schottky diodes are specifically.

MCX241 : Zero Cross0.01-1.5 Amps RMS12-280 Volts RMS4-10 Control - Volts DC. Low Minimum Operating Current SCR Output Crydom's Patente d Design The MCX241 AC Relays are 1.5A rated SPST-NO low profile SIP solid state relays offering the Series ASO circuit in the MP package with CX pin-out. They are designed for switching highly inductive, low current loads such as solenoids. Available in either zero voltage or random switching.

PDTC113ET : NPN Resistor-equipped Transistor; R1 = 1 Kohm, R2 = 1 Kohm Built-in Bias Resistors Reduces Component Count Simplifies Circuit Design Reduces Pick And Place Costs. Applications General Purpose Switching And Amplification Circuit Driver. Inverter And Interface Circuits.

PH3135-5M : 3100-3500 Mhz, 5 W, 100 Ms, Radar Pulsed Power Transistor. Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty - 3.5 GHz NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic`MetaVCeramic Package BNC CONNECTOR,.

T2800 : Triacs 8 Amperes RMS 200 Thru 600 Volts. . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. Blocking Voltage to 600 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability.

TIP147F : PNP Epitaxial Darlington Transistor. Monolithic Construction With Built In BaseEmitter Shunt Resistors High DC Current Gain : hFE 1000 @ VCE = -5A (Min.) Industrial Use Complement to TIP140F/141F/142F Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Emitter Voltage : TIP147F Collector-Emitter Voltage : TIP147F Emitter-Base Voltage Collector Current.

ZXT11N20DFTC : 20v NPN Silicon Low Saturation Transistor. This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised 5A IC=2.5A.

05002150CJMC : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000015 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.50E-5 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

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RF0570-000 : RESISTOR, TEMPERATURE DEPENDENT, PTC RESETTABLE FUSE, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), ROHS COMPLIANT ; Power Rating: 1 watts (0.0013 HP) ; Operating AC Voltage: 6 volts ; Standards and Certifications: RoHS.

SST500-LF : 0.24 mA, SILICON, CURRENT REGULATOR DIODE. s: Configuration: Single ; Package: LEAD FREE PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 1 ; PD: 360 milliwatts ; RoHS Compliant: RoHS.

TK13A65D : 13 A, 650 V, 0.47 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 650 volts ; rDS(on): 0.4700 ohms ; Package Type: TO-220, ROHS COMPLIANT, 2-10U1S, SC-67, TO-220SIS, 3 PIN ; Number of units in IC: 1.

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