Details, datasheet, quote on part number: BAV70SQ62702A1097
CategoryDiscrete => Diodes & Rectifiers
DescriptionDiode Quad Sot363
DatasheetDownload BAV70SQ62702A1097 datasheet


Features, Applications

For high speed switching applications Common cathode Internal (galvanic) isolated Diodes Arrays in one package

Maximum Ratings per Diode Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, 1 s Total Power dissipation Symbol Values mW C Unit V

Junction temperature Storage temperature Thermal Resistance Junction ambient

Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics per Diode Breakdown voltage Values typ. max. Unit

Forward current = f (TA*;TS) * Package mounted on epoxy


Some Part number from the same manufacture
BAV70W/T1 Diode Sot-323
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BAV99SQ62702A1277 Diode Quad Sot363
BAV99W/T1 Diode Sot-323
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BAW56-MR Diode Baw56 Minireel 500pcs
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BB149A/T1 Diode Vari-cap Sod-323
BBY31/T1 Diode Vari-cap Sot-23
Same catergory

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TIP147F : PNP Epitaxial Darlington Transistor. Monolithic Construction With Built In BaseEmitter Shunt Resistors High DC Current Gain : hFE 1000 @ VCE = -5A (Min.) Industrial Use Complement to TIP140F/141F/142F Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Emitter Voltage : TIP147F Collector-Emitter Voltage : TIP147F Emitter-Base Voltage Collector Current.

ZXT11N20DFTC : 20v NPN Silicon Low Saturation Transistor. This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised 5A IC=2.5A.

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