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Part: BAV99-MR
Category:
Discrete
-> Diodes & Rectifiers
Description: Diode Bav99 Minireel 500pcs
Company:
Datasheet: Download BAV99-MR datasheet File size : 52 kB
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Datasheet text preview:
BAV99
Discrete POWER & Signal Technologies
BAV99
CON NECT ION DIAGRAM
3
3
3
A7
2
1 2
SOT-23
1
2
1
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings*
Symb ol
W IV IO IF if if(surge) W or king Inverse Voltage Average Rectified Current DC Forward Current Recur rent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
Valu e
70 200 600 700 1.0 2.0 -55 to +150 150
Un its
V mA mA mA A A °C °C
Tst g TJ
Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Oper ating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symb ol
PD RJA
TA = 25°C unless otherwise noted
Ch aracteristic
Tot al Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
BAV99 350 2.8 357
Un its
mW mW / °C °C/W
©1 9 9 7 Fairchild Semiconductor Corporation
BAV99
High Conductance Ultra Fast Diode
(continued)
Electrical Characteristics
Symb ol
BV IR
TA = 25°C unless otherwise noted
Parameter
Breakdown Voltage Reverse Current
T est Conditions
I R = 100 µA VR = 70 V VR = 25 V, TA = 150°C VR = 70 V, TA = 150°C I F = 1.0 mA I F = 10 mA I F = 50 mA I F = 150 mA VR = 0, f = 1.0 MHz I F = IR = 10 mA, IRR = 1.0 mA, RL = 100 I F = 10 mA, tr = 20 nS
Min
70
Max
2.5 30 50 715 855 1.0 1.25 1.5 6.0 1.75
Un its
V µA µA µA mV mV V V pF nS V
VF
Forwar d Voltage
CO TRR VFM
Diode Capacitance Reverse Recovery Time Peak Forward Voltage
Typical Characteristics
50 0 05 REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA
V VR - REVERSE VOLTAGE (V) R
15 0
IR - REVERSE CURRENT (nA)
1N4150 MMBD1201 1205 REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V
30 0 Ta= 25°C 25 0 20 0 15 0 10 0 50 0 10 20 30 50 VR - REVERSE VOLTAGE (V) 70 10 0
Ta= 25°C
14 0
13 0
12 0
11 0
1
2
3 5 10 20 30 50 I R - REVERSE CURRENT (uA)
10 0
GE NER AL RULE: The Reverse Current of a diode will approximately d ou ble for every ten (10) Degree C increase in Temperature
FO RWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA
V VFF - FORWARD VOLTAGE (mV)
FO RWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA
V VFF - FORWARD VOLTAGE (mV)
48 5 Ta= 25°C 450 400 350 300 250 22 5 1 2 3 5 10 20 30 50 100 I I FF - FORWARD CURRENT (uA)
72 5 Ta= 25°C 700 650 600 550 500 450 0.1
0.2 0.3 0.5 1 2 3 5 IF - FORWARD CURRENT (mA)
10
BAV99
High Conductance Ultra Fast Diode
(continued)
Typical Characteristics
(continued)
FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 800 mA
VF - FORWARD VOLTAGE (V) F 1.5 1.4 1.2 1 0.8 0.6 10 Ta= 25°C CAPACITANC E (pF) 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 500
CAPACITANCE vs REVERSE VOLTAGE VR - 0.0 to 15 V
1.3
Ta = 25°C
1.2
1.1
1
0
2
4 6 8 10 REVERSE VOLTAGE (V)
12
14 1 5
REV ERSE RECOVERY TIME vs REVERSE CURRENT TRR - IR 10 mA vs 60 mA
REVER SE RECOVERY (nS) 4 3.5 3 2.5 2 1.5 1 10 20 30 40 50 REVER SE CURRENT (mA) 60 PD - POWER DISSIPATION (mW) Ta= 25°C 50 0 40 0 30 0 20 0 10 0 0
Aver age Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA)
IR -F OR WA R
D
CU R
RE NT
Io - A VERA GE R ECTI FIE D
ST EA DY
ST AT E
CUR RE N T
-m
A
- mA
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
0
50 10 0 15 0 TA - AMBIENT TEMPERATURE ( o C)
POWER DERATING CURVE
50 0
PD - POWER DISSIPATION (mW) PD
40 0
D O-35 Pkg
30 0 SOT- 23 Pkg
20 0
10 0
0
0
50 10 0 15 0 IO - AVERAGE TEMPERATURE ( oC)
20 0
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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