Details, datasheet, quote on part number: BAV99W/T1
CategoryDiscrete => Diodes & Rectifiers
DescriptionDiode Sot-323
DatasheetDownload BAV99W/T1 datasheet
Find where to buy


Features, Applications

FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 450 mA.

PINNING PIN 2 3 DESCRIPTION anode cathode common connection

DESCRIPTION The BAV99 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package.

APPLICATIONS High-speed switching in thick and thin-film circuits.
Marking code: A7p = made in Hong Kong; A7t = made in Malaysia.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1 IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; 25 C prior to surge; see ms t=1s Ptot Tstg Tj Note 1. Device mounted an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note V mA PARAMETER CONDITIONS MIN. MAX. UNIT

ELECTRICAL CHARACTERISTICS 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see mA IR reverse current see C Cd trr diode capacitance reverse recovery time = 1 MHz; = 0; see Fig.6 when switched from = 10 mA; 100 ; measured = 1 mA; see Fig.7 when switched from = 10 mA; = 20 ns; see Fig.8 PARAMETER CONDITIONS MAX.

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W


Some Part number from the same manufacture
BAV99WQ62702A1051 Diode Dual Sot-323
BAW56-MR Diode Baw56 Minireel 500pcs
BAW56/T1 Diode Sot-23
BAW62/A52R Diode Do-35
BAX12A/A52R Diode Controlled Avalanche
BB149A/T1 Diode Vari-cap Sod-323
BBY31/T1 Diode Vari-cap Sot-23
Same catergory

28M0B : 60v 300ma Monolithic Diode Array. TWO EIGHT DIODE CORE DRIVER trr 20 ns RUGGED AIR-ISOLATED CONSTRUCTION LOW REVERSE LEAKAGE CURRENT VBR(R) *1 *2 Reverse Breakdown Voltage IO *1 Continuous Forward Current IFSM *1 Peak Surge Current (tp= 1/120 s) Top Operating Junction Temperature Range Tstg Storage Temperature Range NOTE 1: Each Diode NOTE 2: Pulsed: = 100ms max.; duty cycle < 20% Electrical.

FP206 : . Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. The FP206 is composed of 2 chips, one being equivalent to the 2SA1728 and the other 2SC4519, placed in one package. Electrical Connection s Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current.

GSD2004S : Small Signal. Small Signal Diode. Silicon Epitaxial Planar Diode Fast switching dual in-series diode, especially suited for applications requiring high voltage capability Case: SOT-23 (TO-236AB) Plastic Package Weight: approx. 0.008g Marking Code: DB6 Packaging Codes/Options: E8/10K per 13" reel (8mm tape), 30K/box E9/3K per 7" reel (8mm tape), 30K/box Parameter Continuous Reverse Voltage.

MUR10020 : 100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts. 100 Amp Supre Fast Recovery Rectifier to 600 Volts HALF PACK Supre Fast switching for high efficiency High Surge Capability Low Leakage Low Forward Voltage Drop High Current Capability Operating Temperature: to +175C Storage Temperature: to +175C Maximum Recurrent Peak Reverse Voltage 400V 600V Maximum DC Blocking Voltage 400V 600V Average Forward.

RB705D : . zApplications General purpose detection High speed switching zExternal dimensions (Units : mm) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Parameter Forward voltage Reverse current Capacitance between terminals Symbol IR CT Min. - Typ. - 2.0 Max. 1 - Unit.

S110-T1 : 1.0a Surface Mount Schottky Barrier Rectifier.

SPP21N10 : Low Voltage. SIPMOS®. Feature N-Channel Enhancement mode 175C operating temperature Avalanche rated dv/dt rated Maximum Ratings,at = 25 C, unless otherwise specified Parameter Continuous drain current Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: Electrical.

TBS7--35 : Style = Phase Control ;; Type = Disc/hockey Puk ;; Voltage = 3000V ;; Current =   ;; Circuit Configuration = Single.

TISP4350L3BJ : Bidirectional Thyristor Overvoltage Protectors.

TYP212--2012 : SCR For Overvoltage Protection. High surge current capability High dI/dt rating High stability and reliability The TYN512 and TYN1012 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for overvoltage protection in crowbar circuits application. Symbol IT(RMS) IT(AV) ITSM.

UGB8FT : Ultrafast Soft Recovery Rectifier. Reverse Voltage to 400 Volts Forward Current - 8.0 Amperes Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Ideally suited for freewheeling diode power factor correction applications Soft recovery characteristics Excellent high temperature switching Optimized to reduce switching losses High temperature soldering in accordance.

CMLT6427E : : The CENTRAL SEMICONDUCTOR CMLT6427E is an Enhanced , PICOmini, NPN Silicon Darlington Transistor. High DC Current gains, coupled with a Low Saturation Voltage, make this an excellent choice for industrial/consumer applications where operational efficiency and small size are top priority. MARKING CODE : C64 Notes: (1) Ceramic or aluminum core PC Board.

BLM10A100SPB : 1 FUNCTIONS, 0.5 A, FERRITE CHIP. s: Devices in Package: 1 ; EIA Case Size: EIA STD PACKAGE SIZE 0402, 2 PIN ; DCR: 0.0500 ohms ; Rated DC Current: 500 milliamps ; Operating Temperature: -55 to 125 C (-67 to 257 F).

ERSA : RESISTOR, 0.125 W, 2; 5 %, 2400; 3900; 4300 ppm, 1 ohm - 2200 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating Temperature: -30 to 70 C (-22 to 158 F).

FHTC3906 : 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: SOT23, SOT-23, 3 PIN.

GRM1555C1E3R5CZ01B : CAPACITOR, CERAMIC, MULTILAYER, 25 V, C0G, 0.0000035 uF, SURFACE MOUNT, 0402. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.50E-6 microF ; Capacitance Tolerance: 7 (+/- %) ; WVDC: 25 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

KTR18EZPF47R0 : RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 100 ppm, 47 ohm, SURFACE MOUNT, 1206. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 1206, CHIP ; Resistance Range: 47 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating: 0.2500.


0-C     D-L     M-R     S-Z