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Part: BC549C/RR
Category:
Discrete
-> Transistors
Description: Transistor
Company:
Datasheet: Download BC549C/RR datasheet File size : 324 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC549; BC550 NPN general purpose transistors
Product specification Supersedes data of 1997 Jun 20 1999 Apr 22
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES · Low current (max. 100 mA) · Low voltage (max. 45 V). APPLICATIONS · Low noise stages in audio frequency equipment. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560.
1 handbook, halfpage
BC549; BC550
PINNING PIN 1 2 3 emitter base collector DESCRIPTION
2 3
3 2 1
MAM182
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC549 BC550 VCEO collector-emitter voltage BC549 BC550 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 open collector open base - - - - - - - -65 - -65 30 45 5 100 200 200 500 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter - - 30 50 V V MIN. MAX. UNIT
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN general purpose transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC549C; BC550C VCEsat VBEsat VBE Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 µA; VCE = 5 V; see Fig.2 IC = 2 mA; VCE = 5 V; see Fig.2 IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.5 mA; note 1 IC = 100 mA; IB = 5 mA; note 1 IC = 2 mA; VCE = 5 V; note 2 IC = 10 mA; VCE = 5 V; note 2 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 k; f = 10 Hz to 15.7 kHz IC = 200 µA; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. - 420 - - - - 580 - - - 100 - - CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V MIN. - - - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1
BC549; BC550
VALUE 250
UNIT K/W
TYP. - - - 270 520 90 200 700 900 660 - 1.5 11 - - -
MAX. 15 5 100 - 800 250 600 - - 700 770 - - - 4 4
UNIT nA µA nA
mV mV mV mV mV mV pF pF MHz dB dB
1999 Apr 22
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
handbook, full pagewidth
600
MBH725
VCE = 5 V hFE
400
200
0 10-2
10-1
1
10
102
IC (mA)
103
BC549C; BC550C.
Fig.2 DC current gain; typical values.
1999 Apr 22
4
Philips Semiconductors
Product specification
NPN general purpose transistors
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
BC549; BC550
SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5
1999 Apr 22
5
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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