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Part: BC846/T1
Category:
Discrete
-> Transistors
Description: Transistor Sot-23
Company:
Datasheet: Download BC846/T1 datasheet File size : 65 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC846; BC847 NPN general purpose transistors
Product specification Supersedes data of 1997 Mar 12 1999 Apr 23
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES · Low current (max. 100 mA) · Low voltage (max. 65 V). APPLICATIONS · General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856 and BC857. MARKING TYPE NUMBER BC846 BC846A BC846B BC847 Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. MARKING CODE 1D 1A 1B 1H* TYPE NUMBER BC847A BC847B BC847C MARKING CODE(1) 1E 1F 1G
Top view
handbook, halfpage
BC846; BC847
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC846 BC847 VCEO collector-emitter voltage BC846 BC847 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 23 2 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 open collector open base - - - - - - - -65 - -65 65 45 6 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter - - 80 50 V V MIN. MAX. UNIT
Philips Semiconductors
Product specification
NPN general purpose transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC846A; BC847A BC846B; BC847B BC847C DC current gain BC846 BC847 BC846A;BC847A BC846B; BC847B BC847C VCEsat VBEsat VBE Cc fT F Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.5 mA; note 1 IC = 100 mA; IB = 5 mA; note 1 IC = 2 mA; VCE = 5 V; note 2 IC = 10 mA; VCE = 5 V; note 2 IE = ie = 0; VCB = 10 V; f = 1 MHz; IC = 200 µA; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200 Hz IC = 2 mA; VCE = 5 V; see Figs 2, 3 and 4 CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 10 µA; VCE = 5 V; see Figs 2, 3 and 4 MIN. - - - - - - 110 110 110 200 420 - - - - 580 - - - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1
BC846; BC847
VALUE 500
UNIT K/W
TYP. - - - 90 150 270 - - 180 290 520 90 200 700 900 660 - 2.5 - 2
MAX. 15 5 100 - - - 450 800 220 450 800 250 600 - - 700 770 - - 10
UNIT nA µA nA
mV mV mV mV mV mV pF MHz dB
IC = 10 mA; VCE = 5 V; f = 100 MHz; 100
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847
handbook, full pagewidth
250
MBH723
hFE 200 VCE = 5 V
150
100
50
0 10-2
10-1
1
10
102
IC (mA)
103
BC846A; BC847A.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
300
MBH724
hFE
VCE = 5 V
200
100
0 10-2
10-1
1
10
102
IC (mA)
103
BC846B; BC847B.
Fig.3 DC current gain; typical values.
1999 Apr 23
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847
handbook, full pagewidth
600
MBH725
VCE = 5 V hFE
400
200
0 10-2
10-1
1
10
102
IC (mA)
103
BC847C.
Fig.4 DC current gain; typical values.
1999 Apr 23
5
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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