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Part: BC847BPN/T1
Category:
Discrete
-> Transistors
Description: Transistor Sc-88
Company:
Datasheet: Download BC847BPN/T1 datasheet File size : 61 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BC847BPN NPN/PNP general purpose transistor
Preliminary specification Supersedes data of 1997 Jul 09 1999 Apr 26
Philips Semiconductors
Preliminary specification
NPN/PNP general purpose transistor
FEATURES · Low collector capacitance · Low collector-emitter saturation voltage · Closely matched current gain · Reduces number of components and boardspace · No mutual interference between the transistors. APPLICATIONS · General purpose switching and amplification. DESCRIPTION NPN/PNP transistor pair in an SC-88; SOT363 plastic package. MARKING TYPE NUMBER BC847BPN MARKING CODE 13t Fig.1
1 Top view 2 3
handbook, halfpage
BC847BPN
PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
6 5 4
5
4
6
TR2 TR1
1
MAM341
2
3
Simplified outline (SC-88; SOT363) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS - - - - - - Tamb 25 °C - -65 - -65 Tamb 25 °C; note 1 - MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 50 45 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C
1999 Apr 26
2
Philips Semiconductors
Preliminary specification
NPN/PNP general purpose transistor
THERMAL CHARACTERISTICS SYMBOL Per device Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - - 200 - - - 580 600 IE = ie = 0; VCB = 10 V; f = 1 MHz - - IC = ic = 0; VEB = 500 mV; f = 1 MHz - - IC = 10 mA; VCE = 5 V; f = 100 MHz 100 11 10 - - - thermal resistance from junction to ambient note 1 416 PARAMETER CONDITIONS VALUE
BC847BPN
UNIT
K/W
TYP. - - - - - - 755 655 655
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity ICBO IEBO hFE VCEsat VBEsat VBE collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage TR1 NPN TR2 PNP Cc collector capacitance TR1 NPN TR2 PNP Ce emitter capacitance TR1 NPN TR2 PNP fT Note 1. Pulse test: tp 300 µs; 0.02. transition frequency IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 2 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 IC = 10 mA; IB = 0.5 mA IC = 2 mA; VCE = 5 V 700 750 1.5 2.2 - - - mV mV pF pF pF pF MHz 15 5 100 450 100 300 - mV mV mV nA µA nA
1999 Apr 26
3
Philips Semiconductors
Preliminary specification
NPN/PNP general purpose transistor
BC847BPN
handbook, full pagewidth
300
MBH724
hFE
VCE = 5 V
200
100
0 10-2
10-1
1
10
102
IC (mA)
103
TR1: NPN.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
400
MBH727
hFE VCE = -5 V 300
200
100
0 -10-2
-10-1
-1
-10
-102
IC (mA)
-103
TR2: PNP.
Fig.3 DC current gain, typical values.
1999 Apr 26
4
Philips Semiconductors
Preliminary specification
NPN/PNP general purpose transistor
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
BC847BPN
SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Apr 26
5
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