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Part: BC847BS/T1
Category:
Discrete
-> Transistors
Description: Transistor Sc-88
Company:
Datasheet: Download BC847BS/T1 datasheet File size : 57 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BC847BS NPN general purpose double transistor
Product specification Supersedes the data of 1997 Jul 14 1999 Apr 28
Philips Semiconductors
Product specification
NPN general purpose double transistor
FEATURES · Low collector capacitance · Low collector-emitter saturation voltage · Closely matched current gain · Reduces number of components and board space · No mutual interference between the transistors. APPLICATIONS · General purpose switching and amplification. DESCRIPTION NPN double transistor in an SC-88 plastic package. PNP complement: BC857BS. MARKING TYPE NUMBER BC847BS MARKING CODE 1Ft
TR1 1 Top view 2 3 1
MAM340
BC847BS
PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
handbook, halfpage
6 5 4
5
4
6
TR2
2
3
Fig.1 Simplified outline (SC-88) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation Tamb 25 °C; note 1 - 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C open emitter open base open collector - - - - - - - -65 - -65 50 45 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER CONDITIONS MIN. MAX. UNIT
1999 Apr 28
2
Philips Semiconductors
Product specification
NPN general purpose double transistor
THERMAL CHARACTERISTICS SYMBOL Per device Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per transistor ICBO IEBO hFE VCEsat VBEsat VBE Cc Ce fT Note 1. Pulse test: tp 300 µs; 0.02. collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 2 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 IC = 10 mA; IB = 0.5 mA IC = 2 mA; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz - - - 200 - - - 580 - 100 - - - - - - 755 655 - 11 - PARAMETER CONDITIONS MIN. thermal resistance from junction to ambient note 1 416 PARAMETER CONDITIONS VALUE
BC847BS
UNIT
K/W
TYP.
MAX.
UNIT
15 5 100 450 100 300 - 700 1.5 - -
nA µA nA mV mV mV mV pF pF MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz -
1999 Apr 28
3
Philips Semiconductors
Product specification
NPN general purpose double transistor
BC847BS
handbook, full pagewidth
300
MBH724
hFE
VCE = 5 V
200
100
0 10-2
10-1
1
10
102
IC (mA)
103
Fig.2 DC current gain; typical values.
1999 Apr 28
4
Philips Semiconductors
Product specification
NPN general purpose double transistor
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
BC847BS
SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Apr 28
5
Others parts begin by bc
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