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Part: BCP72MQ62702C2517
Category:
Discrete
-> Transistors
Description: Transistor Digital Sct595
Company:
Datasheet: Download BCP72MQ62702C2517 datasheet File size : 162 kB
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Datasheet text preview:
BCP 72M
PNP Silicon AF Power Transistor Preliminary data · Drain switch for RF power amplifier stages · For AF driver and output stages · High collector current · Low collector-emitter saturation voltage
4 5 3 2 1
VPW05980
Type BCP 72M
Marking Ordering Code Pin Configuration PAs Q62702-C2517
Package
1 = E 2 = C 3 = E 4 = B 5 = C SCT-595
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S 94 °C Junction temperature Storage temperature Symbol Value 10 10 5 3 6 200 500 1.7 150 -65...+150 W °C mA A Unit V
VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg
Thermal Resistance Junction ambient 1) Junction - soldering point
RthJA RthJS
88 33
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group Semiconductor Group
11
Jun1998-1998 -05-1 1-01
BCP 72M
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter
Unit max. 100 20 100 nA µA nA V
min. DC Characteristics Collector-emitter breakdown voltage
typ. -
V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE
10 10 5 -
I C = 10 mA, I B = 0
Collector-base breakdown voltage
I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 8 V, IE = 0
Collector cutoff current
VCB = 8 V, IE = 0 , T A = 150 °C
Emitter cutoff current
VEB = 4 V, I C = 0
DC current gain 1)
I C = 10 mA, VCE = 5 V I C = 500 mA, V CE = 1 V I C = 2 A, VCE = 2 V
Collector-emitter saturation voltage1)
25 85 50
0.15 -
475 1.2 V
VCEsat VBEsat
-
I C = 2 A, I B = 0.2 A
Base-emitter saturation voltage 1)
I C = 2 A, I B = 0.2 A
AC Characteristics Transition frequency
fT Ccb
-
100 100
-
MHz pF
I C = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group Semiconductor Group
22
Jun1998-1998 -05-1 1-01
BCP 72M
Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy
2000
mW
1600 1400
TS
P tot
1200 1000 800 600 400 200 0 0
TA
20
40
60
80
100
120 °C
150
TA,TS
Permissible Pulse Load R thJS = f (tp)
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 2 10 3
Ptotmax / PtotDC
K/W
-
RthJS
10 1
10 2
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Semiconductor Group Semiconductor Group
33
Jun1998-1998 -05-1 1-01
BCP 72M
DC current gain h FE = f (I C)
Collector-emitter saturation voltage
VCE = 2V
10 3
IC = f (VCEsat ), hFE = 10
10 4
mA
-
100°C 25°C
3 IC 10
hFE
10 2
-50°C
100°C 25°C -50°C
10 2
10 1 10 1
10 0 0 10
10
1
10
2
10
3
mA
10 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 V
0.50
IC
VCEsat
Base-emitter saturation voltage
Collector current I C = f (VBE)
I C = f (VBEsat), hFE = 10
10 4
mA
VCE = 2V
10 4
mA
IC
10 3
3 I C 10
-50°C 25°C 100°C
10 2 10 2
-50°C 25°C 100°C
10 1
10 1
10 0 0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
10 0 0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
VBEsat
VBE
Semiconductor Group Semiconductor Group
44
Jun1998-1998 -05-1 1-01
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