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Part: BCR141WQ62702C2288
Category:
Discrete
-> Transistors
Description: Transistor Digital Sot323
Company:
Datasheet: Download BCR141WQ62702C2288 datasheet File size : 162 kB
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Datasheet text preview:
BCR 141W
NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1=22k, R2=22k)
Type BCR 141W
Marking Ordering Code WDs Q62702-C2288
Pin Configuration 1=B 2=E 3=C
Package SOT-323
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 124°C Junction temperature Storage temperature Symbol Values 50 50 10 30 100 250 150 - 65 ... + 150 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg
Thermal Resistance Junction ambient
1)
RthJA RthJS
240 105
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Nov-26-1996
BCR 141W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
50 22 1 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 350 50 V 0.3 1.5 2.5 29 1.1 k -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
1
IC = 2 mA, VCE = 0.3 V
Input resistor Resistor ratio
R1 R1/R2
15 0.9
AC Characteristics Transition frequency
fT
130 3 -
MHz pF -
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
Ccb
VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
Nov-26-1996
BCR 141W
DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration)
Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20
10 3
10 2
-
h FE
10 2
IC
mA
10 1
10 1
10 0 -1 10
10
0
10
1
mA
10 0 0.0
0.2
0.4
0.6
V
IC
1.0 V CEsat
Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration)
Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration)
10 2
10 1
mA mA
IC
10 1
IC
10 0
10 -1
10 0 10 -2
10 -1 -1 10
10
0
10
1
V
10 -3 0.0
0.5
1.0
1.5
2.0
V
3.0
V i(on)
V i(off)
Semiconductor Group
3
Nov-26-1996
BCR 141W
Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy
300
mW
P tot
200
TS
TA
150
100
50
0 0 20 40 60 80 100 120 ° C 150 TA ,TS
Permissible Pulse Load RthJS = f(tp)
Permissible Pulse Load Ptotmax / PtotDC = f(tp)
10 3
10 3
K/W -
RthJS
10 2
Ptotmax/PtotDC
10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
4
Nov-26-1996
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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