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Part: BCW32/T1
Category:
Discrete
-> Transistors
Description: Transistor Sot-23
Company:
Datasheet: Download BCW32/T1 datasheet File size : 64 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D088
BCW31; BCW32; BCW33 NPN general purpose transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jan 29
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES · Low current (100 mA) · Low voltage (32 V). APPLICATIONS · General purpose switching and amplification. DESCRIPTION NPN transistors in a plastic SOT23 package. PNP complements: BCW29 and BCW30. MARKING
handbook, halfpage
BCW31; BCW32; BCW33
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2
1
2
MAM255
TYPE NUMBER BCW31 BCW32 BCW33
MARKING CODE D1p D2p D3p
Top view
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain BCW31 BCW32 BCW33 fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz Tamb 25 °C IC = 2 mA; VCE = 5 V 110 200 420 100 220 450 800 - MHz open emitter open base CONDITIONS - - - - MIN. MAX. 32 32 200 250 V V mA mW UNIT
1997 Jan 29
2
Philips Semiconductors
Product specification
NPN general purpose transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C CONDITIONS open emitter open base; IC = 2 mA open collector
BCW31; BCW32; BCW33
MIN. - - - - - - - -65 - -65
MAX. 32 32 5 100 200 200 250 +150 150 +150 V V V
UNIT
mA mA mA mW °C °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K/W
1997 Jan 29
3
Philips Semiconductors
Product specification
NPN general purpose transistors
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BCW31 BCW32 BCW33 hFE DC current gain BCW31 BCW32 BCW33 VCEsat VBEsat VBE Cc fT F collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA IC = 2 mA; VCE = 5 V IC = 2 mA; VCE = 5 V CONDITIONS IE = 0; VCB = 32 V IE = 0; VCB = 32 V; Tj = 100 °C IC = 0; VEB = 5 V IC = 10 µA; VCE = 5 V
BCW31; BCW32; BCW33
MIN. - - - - - - 110 200 420 - - - - 550 - 100 -
TYP. - - - 90 150 270 - - - 120 210 750 850 - 2.5 - -
MAX. 100 10 100 - - - 220 450 800 250 - - - 700 - - 10
UNIT nA µA nA
mV mV mV mV mV pF MHz dB
IE = Ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200 Hz
1997 Jan 29
4
Philips Semiconductors
Product specification
NPN general purpose transistors
PACKAGE OUTLINE Package description
BCW31; BCW32; BCW33
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e p
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0 1.1 .9 A m1 ax. 0.1 bp 0.48 .38 c 0.15 .09 D 2 3.0 .8 E 1.4 .2 e 1.9 e1 0.95 HE 2.5 .1 Lp 0.45 .15 Q 0.55 .45 v 0.2 w 0.1
V UTLINE O ERSION SOT23
REFERENCES IEC b JEDEC EIAJ
P UROPEAN E ROJECTION
ISSUE DATE
1997 Jan 29
5
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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