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Part: BCW67
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Datasheet: Download BCW67 datasheet File size : 265 kB
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PNP Silicon AF Transistors
BCW 67 BCW 68
q For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 65, BCW 66 (NPN)
Type BCW 67 A BCW 67 B BCW 67 C BCW 68 F BCW 68 G BCW 68 H
Marking DAs DBs DCs DFs DGs DHs
Ordering Code (tape and reel) Q62702-C1560 Q62702-C1480 Q62702-C1681 Q62702-C1893 Q62702-C1322 Q62702-C1555
Pin Configuration 1 2 3 B E C
Package1) SOT-23
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BCW 67 BCW 68
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS
285 215
Symbol BCW 67 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 32 45 5
Values BCW 68 45 60 5 800 1 100 200 330 150 65 ... + 150
Unit V
mA A mA mW °C
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BCW 67 BCW 68
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 67 BCW 68 Collector-base breakdown voltage IC = 10 µA BCW 67 BCW 68 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 °C VCB = 45 V, TA = 150 °C BCW 67 BCW 68 BCW 67 BCW 68 IEB0 hFE 35 50 80 75 120 180 100 160 250 35 60 100 160 250 350 250 400 630 V(BR)CE0 32 45 V(BR)CB0 45 60 V(BR)EB0 ICB0 20 20 20 20 20 nA nA µA µA nA 5 V Values typ. max. Unit
Emitter-base cutoff current, VEB = 4 V DC current gain1) IC = 100 µA, VCE = 10 V BCW 67 A, BCW 68 F BCW 67 B, BCW 68 G BCW 67 C, BCW 68 H IC = 10 mA, VCE = 1 V BCW 67 A, BCW 68 F BCW 67 B, BCW 68 G BCW 67 C, BCW 68 H IC = 100 mA, VCE = 1 V BCW 67 A, BCW 68 F BCW 67 B, BCW 68 G BCW 67 C, BCW 68 H IC = 500 mA, VCE = 2 V BCW 67 A, BCW 68 F BCW 67 B, BCW 68 G BCW 67 C, BCW 68 H
1)
Pulse test: t 300 µs, D = 2 %.
Semiconductor Group
3
BCW 67 BCW 68
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz fT Cobo Cibo 200 6 60 MHz pF VCEsat VBEsat 1.25 2 0.3 0.7 V Values typ. max. Unit
1)
Pulse test: t 300 µs, D = 2 %.
Semiconductor Group
4
BCW 67 BCW 68
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Transition frequency fT = f (IC) VCE = 5 V
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector cutoff current ICB0 = f (TA) VCB = VCEmax
Semiconductor Group
5
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